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US20050130341: Selective synthesis of semiconducting carbon nanotubes

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Filing Information

Inventor(s) Toshiharu Furukawa · Mark Hakey · Steven Holmes · David Horak · Charles Koburger · Peter Mitchell · Larry Nesbit ·
Assignee(s) INTERNATIONAL BUSINESS MACHINES CORPORATION ·
Correspondent IBM CORPORATION;ROCHESTER IP LAW DEPT. 917 ·
Application Number US10732951
Filing date 12/11/2003
Publication date 06/16/2005
Predicted expiration date 12/11/2023
U.S. Classifications 438/105  · 257/77  · 438/931  ·
International Classifications --
Kind CodeA1
65 Claims, 9 Drawings


Abstract

Methods for selecting semiconducting carbon nanotubes from a random collection of conducting and semiconducting carbon nanotubes synthesized on multiple synthesis sites carried by a substrate and structures formed thereby. After an initial growth stage, synthesis sites bearing conducting carbon nanotubes are altered to discontinue synthesis at these specific synthesis sites and, thereby, halt lengthening of the conducting carbon nanotubes. Synthesis sites bearing semiconducting carbon nanotubes are unaffected by the alteration so that semiconducting carbon nanotubes may be lengthened to a greater length than the conducting carbon nanotubes.

Independent Claims | See all claims (65)

  1. 1. A method for producing semiconducting carbon nanotubes, comprising: synthesizing conducting carbon nanotubes to a first length on a first plurality of synthesis sites carried by a substrate; and synthesizing semiconducting carbon nanotubes to a second length on a second plurality of synthesis sites carried by the substrate, the second length of the semiconducting carbon nanotubes being greater than the first length of the conducting carbon nanotubes.
  2. 17. A method for producing semiconducting carbon nanotubes, comprising: synthesizing conducting carbon nanotubes on a first plurality of synthesis sites carried by a substrate; synthesizing semiconducting carbon nanotubes on a second plurality of synthesis sites carried by the substrate; interrupting the synthesis of the conducting and the semiconducting carbon nanotubes; altering the first plurality of synthesis sites to prevent resumed synthesis of the conducting carbon nanotubes; and resuming the synthesis of semiconducting carbon nanotubes at the second plurality of synthesis sites to lengthen the semiconducting carbon nanotubes relative to the conducting carbon nanotubes.
  3. 38. A method for producing semiconducting carbon nanotubes, comprising: synthesizing conducting carbon nanotubes on a first plurality of synthesis sites carried by a substrate, each of the conducting carbon nanotubes including a free end and one of a second plurality of synthesis sites at the free end; synthesizing semiconducting carbon nanotubes on a second plurality of synthesis sites carried by the substrate, each of the semiconducting carbon nanotubes including a free end and one of a fourth plurality of synthesis sites at the free end; interrupting the synthesis of the conducting and the semiconducting carbon nanotubes; forming a prophylactic barrier on the substrate to prevent synthesis of the conducting carbon nanotubes at the first plurality of synthesis sites and the synthesis of semiconducting carbon nanotubes at the third plurality of synthesis sites; altering the second plurality of synthesis sites to prevent resumed synthesis of the conducting carbon nanotubes; and resuming the synthesis of the semiconducting carbon nanotubes at the fourth plurality of synthesis sites to lengthen the semiconducting carbon nanotubes relative to the conducting carbon nanotubes.
  4. 57. A structure comprising: a substrate carrying a plurality of first and a plurality of second synthesis sites each configured for synthesizing carbon nanotubes; a plurality of semiconducting carbon nanotubes each carried by one of the first plurality of synthesis sites; and a plurality of conducting carbon nanotubes each carried by one of the second plurality of synthesis sites, each of said plurality of conducting carbon nanotubes characterized by a first length less than a second length characterizing each of said plurality of semiconducting carbon nanotubes.

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