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US4239811: Low pressure chemical vapor deposition of silicon dioxide with oxygen enhancement of the chlorosilane-nitrous oxide reaction

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Filing Information

Inventor(s) Bernard M. Kemlage ·
Assignee(s) International Business Machines Corporation ·
Attorney/Agent(s) George O. Saile ·
Primary Examiner Evan K. Lawrence ·
Application Number US6066965
Filing date 08/16/1979
Issue date 12/16/1980
Predicted expiration date 08/16/1999
U.S. Classifications 427/95  · 427/255  ·
International Classifications C23C 1100  ·
Kind CodeA
International Classifications 42795;248 C;255;255.3 ·
10 Claims, No Drawings


Abstract

A method is described for forming a silicon dioxide layer on a semiconductor substrate in a furnace heated reaction zone of a chemical vapor deposition reactor having an input end for gaseous reactants wherein the silicon dioxide layer is not subject to degradation during subsequent oxidation cycles. A gaseous chlorosilane is mixed with nitrous oxide gas in the reactor. Oxygen gas is added, between about 0.25% to 10% by volume of total reactive gas mixture, to the chlorosilane and nitrous oxide gases in the reaction zone where the temperature is between about 800.degree. C. to 1200.degree. C. in a pressure of less than about 5 torr to deposit the silicon dioxide layer onto the substrate.

Independent Claims | See all claims (10)

  1. 1. A method for forming a silicon dioxide layer on a semiconductor substrate in a furnace heated reaction zone of a chemical vapor deposition reactor having an input end for gaseous reactants wherein the said layer is not subject to degradation during subsequent oxidation cycles comprising:mixing a gaseous chlorosilane with nitrous oxide gas in the reactor; andadding oxygen gas between about 0.25% to 10% by volume of total reactive gas mixture to said chlorosilane and nitrous oxide gases in the said reaction zone where the temperature is between about 800.degree. C. to 1200.degree. C. in a pressure of less than about 5 torr to deposit said silicon dioxide layer onto said substrate.

References Cited

U.S. Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
USB554164 Graul et al. Mar 1976
US3331716 PHILIPS CORP Bloem et al. Jul 1967
US3887726 IBM Bratter et al. Jun 1975
US4002512 Western Electric Company, Inc. Lim Jan 1977

Other Publications

Rosler, R. S., "Low Pressure CVD Production Processes for _Poly, Nitride, and Oxide", Solid State Technology, Apr. 1977, pp. 63-70. _

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