Filing Information

Inventor(s)	Bernard M. Kemlage ·
Assignee(s)	International Business Machines Corporation ·  View assignee updates
Attorney/Agent(s)	George O. Saile ·
Primary Examiner	Evan K. Lawrence ·
Application Number	US6066965
Filing date	08/16/1979
Issue date	12/16/1980
Predicted expiration date	08/16/1999
U.S. Classifications	427/95  · 427/255  ·
International Classifications	C23C 1100  ·
Kind Code	A
International Classifications	42795;248 C;255;255.3 ·

Patent Family

Abstract

A method is described for forming a silicon dioxide layer on a semiconductor substrate in a furnace heated reaction zone of a chemical vapor deposition reactor having an input end for gaseous reactants wherein the silicon dioxide layer is not subject to degradation during subsequent oxidation cycles. A gaseous chlorosilane is mixed with nitrous oxide gas in the reactor. Oxygen gas is added, between about 0.25% to 10% by volume of total reactive gas mixture, to the chlorosilane and nitrous oxide gases in the reaction zone where the temperature is between about 800.degree. C. to 1200.degree. C. in a pressure of less than about 5 torr to deposit the silicon dioxide layer onto the substrate.

Independent Claims | See all claims (10)

1. 1. A method for forming a silicon dioxide layer on a semiconductor substrate in a furnace heated reaction zone of a chemical vapor deposition reactor having an input end for gaseous reactants wherein the said layer is not subject to degradation during subsequent oxidation cycles comprising:mixing a gaseous chlorosilane with nitrous oxide gas in the reactor; andadding oxygen gas between about 0.25% to 10% by volume of total reactive gas mixture to said chlorosilane and nitrous oxide gases in the said reaction zone where the temperature is between about 800.degree. C. to 1200.degree. C. in a pressure of less than about 5 torr to deposit said silicon dioxide layer onto said substrate.