Join
today

Boliven PRO is more than just patent search

  • Build and save lists using the powerful Lists feature
  • Analyze and download your search results
  • Share patent search results with your clients

Patents »

US5004927: Process for forming a fine pattern having a high aspect ratio

Share

Filing Information

Inventor(s) Kenji Nakagawa ·
Assignee(s) Fujitsu Limited ·
Attorney/Agent(s) Staas & Halsey ·
Primary Examiner Bruce C. Anderson ·
Application Number US7529744
Filing date 05/25/1990
Issue date 04/02/1991
Predicted expiration date 12/12/2008
U.S. Classifications 250/492.2  · 250/309  ·
International Classifications H01J 37302  ·
Kind CodeA
International Classifications 250309;492.21;492.22 ·
Related U.S. Application DataCROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation of application Ser. No. 07/282,505 filed Dec. 12, 1988, now abandoned.
Foreign Priority JP62314761 - 12/10/1987 ·
20 Claims, No Drawings


Abstract

A fine pattern having a high aspect ratio is precisely formed using a focused-ion beam system by depositing a pattern, detecting an image of the deposited pattern, comparing the image of the deposited pattern to data for a pattern to be formed, depositing again, if necessary, to form a portion of the deposited to be formed but omitted from the deposited pattern, and removing an excess portion of the deposited pattern or the further deposited portion.

Independent Claims | See all claims (20)

  1. 1. A process for forming a desired, fine pattern by a focused-ion beam (FIB) system, comprising the steps of:(A) mounting a sample in the FIB system;(B) scanning an ion beam on the sample while supplying a reaction gas over the sample at a first scanning condition to deposit a material from the reaction gas onto the sample, the deposited material forming a first pattern including material in excess of the desired pattern and forming a sloped foot about the periphery of the desired fine pattern; and(C) repeatedly performing a cycle comprising the following steps until the desired, fine pattern without a sloped foot along the entire periphery thereof is obtained:(i) scanning an ion beam at least along the periphery of the first pattern at a second scanning condition to acquire an image of the first pattern;(ii) comparing the acquired image of the first pattern with the desired, fine pattern to detect excess material of the first pattern which should be removed; and(iii) scanning an ion beam onto said excess material of the first pattern at a third scanning condition to remove at least a part thereof, wherein said scanning at each of the second scanning condition and at the third scanning condition is performed along the entire periphery of the desired pattern at least once;wherein said steps (B) and (C) are carried out in said FIB system.
  2. 10. A process for forming a desired, fine pattern by a focused-ion beam (FIB) system, comprising the steps of:(A) mounting a sample including a substrate and a first pattern on the substrate in the FIB system, the first pattern having a first portion whereat a material is to be deposited for completing the desired, fine pattern;(B) scanning an ion beam on the first portion while supplying a reaction gas over the sample at a first scanning condition to deposit a material from the reaction gas onto the first portion of the sample, the deposited material forming a second pattern together with the first pattern and the second pattern including material which is in excess of the material required to be deposited on the first portion for completing the desired, fine pattern and which forms a sloped foot; and(C) repeatedly performing a cycle comprising the following steps until the desired, fine pattern without a sloped foot along the entire periphery thereof is obtained:(i) scanning an ion beam at least along a periphery of the second pattern at a second scanning condition to acquire an image of the pattern;(ii) comparing the acquired image of the second pattern with the desired, fine pattern to detect the excess material of the second pattern which should be removed; and(iii) scanning an ion beam onto said excess material of the second pattern at a third scanning condition to remove at least a part thereof, wherein said scanning at each of the second scanning condition and the third scanning condition is performed along the entire periphery of at least the first portion of the desired, fine pattern at least once;wherein said steps (B) and (C) are carried out in said FIB system.
  3. 20.20. A process for adding to a semiconductor circuit having a first wiring pattern, an additional, desired wiring pattern by a focused-ion beam (FIB) system, comprising the steps of:(A) mounting a semiconductor circuit having a first wiring pattern in the FIB system;(B) scanning an ion beam onto the semiconductor circuit while supplying a reaction gas over the semiconductor circuit at a first scanning condition to deposit wiring material from the reaction gas onto the semiconductor circuit, the deposited wiring material forming a second wiring pattern which is added to the first wiring pattern of the semiconductor circuit and includes material which is in excess of the additional, desired wiring pattern and which forms a sloped foot about the periphery of the additional, desired wiring pattern; and(C) repeatedly performing a cycle comprising the following steps until there remains only desired wiring pattern added to the first wiring pattern, without the sloped foot along the entire periphery thereof;(i) scanning an ion beam at least along the periphery of the second wiring pattern at a second scanning condition to acquire an image of the second pattern;(ii) comparing the acquired image of the second pattern with the additional, desired wiring pattern to detect excess material of the second pattern which should be removed; and(iii) scanning an ion beam onto said excess material of the second pattern at a third scanning condition to remove at least a part thereof, wherein said scanning at each of the second scanning condition and the third scanning condition is performed along the entire periphery of the desired wiring pattern at least once;wherein said steps (B) and (C) are carried out in said FIB system.

References Cited

U.S. Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
US4503329 Ltd. Hitachi Yamaguchi et al. Mar 1985
US4609809 Ltd. Hitachi Yamaguchi et al. Sep 1986
US4874947 Micrion Corporation Ward et al. Oct 1989
US4908226 Hughes Aircraft Company Kubena et al. Mar 1990

Foreign Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
JP61123843SEIKO INSTR & ELECTRONICS LTDJun 1986
JP61190941FUJITSU LTDAug 1986
JP62195662SEIKO INSTR & ELECTRONICS LTDAug 1987
WO198602774May 1986

Other Publications

Cambria, T. D. et al., "Mask and Circuit Repair with Focused-Ion Beams", Solid State Technology, vol. 30, No. 9, Sep. 1987, Port Washington, NY, pp. 133-136.
H. Betz & A. Heuberger "Influence of Sputter Effects on the Resolution in X-Ray Mask Repair", (SPIE, vol. 632, pp. 67-75, 1986).
Y. Ochiai, S. Matsui & K. Mori "Focused Ion Beam Technology", (Solid State Technology, pp. 75-78, Nov. 1987).

Patent Family

Document NumberAssigneeInventorsIssue/Pub Date
EP0320292 FUJITSU LIMITED Kenji Nakagawa Jun 1989
US5004927 Fujitsu Limited Kenji Nakagawa Apr 1991
DE3885863 FUJITSU LTD NAKAGAWA KENJI Jan 1994