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US5368687: Semiconductor processing method of etching insulating inorganic metal oxide materials and method of cleaning metals from the surface of semiconductor wafers

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Filing Information

Inventor(s) Gurtej S. Sandhu · Donald L. Westmoreland · Pierre Fazan ·
Assignee(s) Micron Technology, Inc. ·
Attorney/Agent(s) Wells, St. John, Roberts, Gregory & Matkin ·
Primary Examiner Breneman; R. Bruce ·
Assistant Examiner George Goudreau ·
Application Number US8031572
Filing date 03/15/1993
Issue date 11/29/1994
Predicted expiration date 03/15/2013
U.S. Classifications 156/664  · 156/643  ·
International Classifications H01L 2100  ·
Kind CodeA
International Classifications 156643;646;667;664;662;651;635 ·
32 Claims, No Drawings


Abstract

In one aspect of the invention, a semiconductor processing method includes the following steps: a) providing a layer of an insulating inorganic metal oxide material atop a semiconductor wafer; b) subjecting the wafer with exposed insulating inorganic metal oxide material to dry etching conditions using a halogen or pseudohalogen based chemistry to react the insulating inorganic metal oxide material into solid halogenated or pseudohalogenated material; and c) reacting the solid halogenated or pseudohalogenated material with a gaseous organic ligand precursor to form a gaseous metal organic coordination complex incorporating the organic ligand precursor and to form a gaseous halogenated or pseudohalogenated species which are expelled from the wafer. In another aspect, a semiconductor processing method of removing or otherwise cleaning metal from a semiconductor wafer includes the following steps: a) subjecting a semiconductor wafer having exposed metal to a dry halogen or pseudohalogen gas to react the metal into solid halogenated or pseudohalogenated material; and b) reacting the solid halogenated or pseudohalogenated material with a gaseous organic ligand precursor to form a gaseous metal organic coordination complex incorporating the organic ligand precursor and metal, and to form a gaseous halogenated or pseudohalogenated species, the complex and species being expelled from the wafer. Alternately, the metal is directly incorporated with the gaseous organic ligand precursor without previous halogenation.

Independent Claims | See all claims (32)

  1. 1. A semiconductor processing method comprising the following steps:providing a layer of an insulating inorganic metal oxide material atop a semiconductor wafer;subjecting the wafer with exposed insulating inorganic metal oxide material to dry etching conditions using a halogen or pseudohalogen based chemistry to react the insulating inorganic metal oxide material into solid halogenated or pseudohalogenated material; andreacting the solid halogenated or pseudohalogenated material with a gaseous organic ligand precursor to form a gaseous metal organic coordination complex incorporating the organic ligand precursor and to form a gaseous halogenated or pseudohalogenated species which are expelled from the wafer.
  2. 22. A semiconductor processing method of removing or otherwise cleaning metal from a semiconductor wafer, the method comprising the following steps:subjecting a semiconductor wafer having exposed metal to a dry halogen or pseudohalogen gas to react the metal into solid halogenated or pseudohalogenated material; andreacting the solid halogenated or pseudohalogenated material with a gaseous organic ligand precursor to form a gaseous metal organic coordination complex incorporating the organic ligand precursor and metal, and to form a gaseous halogenated or pseudohalogenated species, the complex and species being expelled from the wafer.
  3. 28. A semiconductor processing method of removing or otherwise cleaning metal from a semiconductor wafer comprising subjecting a semiconductor wafer having exposed metal to a gaseous organic ligand precursor to form a gaseous metal organic coordination complex incorporating the organic ligand precursor and metal, the organic ligand precursor comprising an aromatic compound, the complex being expelled from the wafer.
  4. 29. A semiconductor processing method of removing or otherwise cleaning metal from a semiconductor wafer comprising subjecting a semiconductor wafer having exposed metal to a gaseous organic ligand precursor to form a gaseous metal organic coordination complex incorporating the organic ligand precursor and metal, the organic ligand precursor comprising a material which upon reaction with the metal forms a metal organic coordination complex which is heterocyclic, the complex being expelled from the wafer.
  5. 30. A semiconductor processing method of removing or otherwise cleaning metal from a semiconductor wafer comprising subjecting a semiconductor wafer having exposed metal to a gaseous organic ligand precursor to form a gaseous metal organic coordination complex incorporating the organic ligand precursor and metal, the organic ligand precursor comprising cyclopentadiene or a cyclopentadiene derivative, the complex being expelled from the wafer.
  6. 31. A semiconductor processing method of removing or otherwise cleaning metal from a semiconductor wafer comprising subjecting a semiconductor wafer having exposed metal to a gaseous organic ligand precursor to form a gaseous metal organic coordination complex incorporating the organic ligand precursor and metal, the organic ligand precursor comprising a fused polycyclic, the complex being expelled from the wafer,
  7. 32.32. A semiconductor processing method of removing or otherwise cleaning metal from a semiconductor wafer comprising subjecting a semiconductor wafer having exposed metal to a organic ligand precursor to form a gaseous metal organic coordination complex incorporating the organic ligand precursor and metal, the organic ligand precursor comprising a betadiketone which upon reaction with the metal forms a metal organic coordination complex which is heterocyclic, the complex being expelled from the wafer.

References Cited

U.S. Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
US4451327 PSI Star, Inc. Nelson May 1984
US5098516 Air Products and Chemicals, Inc. Norman et al. Mar 1992
US5100499 Texas Instruments Incorporated Douglas Mar 1992
US5262001 Sharp Kabushiki Kaisha Takehara Nov 1993

Other Publications

"Plasma Etching of PLT-Thin Films and Bulk PLZT Using Fluorine- and Chlorine Based Gases"; Poor et al., Mater. Res. Soc. Symp. Proc.; 200; abstract only; 1990.
K. Koyama et al., "A Stacked Capacitor With (Ba.sub.x SR.sub.1-x)TiO.sub.3 For 256M DRAM," IEDM 91, 824.

Referenced By

Document NumberAssigneeInventorsIssue/Pub Date
US6576547 Micron Technology, Inc. Li Li Jun 2003
US6749717 Micron Technology, Inc. Gurtej S. Sandhu et al. Jun 2004
US6585909 National Institute of Advanced Industrial Science & Technology Tetsuo Tsuchiya et al. Jul 2003
US6828228 Micron Technology, Inc. Li Li Dec 2004
US6554910 Micron Technology, Inc. Gurtej S. Sandhu et al. Apr 2003
US7137061 Infineon Technologies AG Jrgen Blank Nov 2006
US6514425 Agency of Industrial Science and Technology Akira Sekiya et al. Feb 2003
US7470631 Micron Technology, Inc. Li Li Dec 2008
US6747359 Micron Technology, Inc. Li Li Jun 2004
US7700497 Micron Technology, Inc. Li Li Apr 2010
US6065481 FSI International, Inc. Robert T. Fayfield et al. May 2000
US5814238 Sandia Corporation Ashby; Carol I. H. et al. Sep 1998
US5773363 Micron Technology, Inc. Garo J. Derderian et al. Jun 1998
US5782986 FSI International Jeffery W. Butterbaugh et al. Jul 1998
US6299724 FSI International, Inc. Robert T. Fayfield et al. Oct 2001
US6284146 Samsung Electronics Co., Ltd. Jin-hong Kim et al. Sep 2001
US5873977 Sharp Kabushiki Kaisha Seshu B. Desu et al. Feb 1999
US6177145 Micron Technology, Inc. Garo J. Derderian et al. Jan 2001
US5893758 Micron Technology, Inc. Gurtej S. Sandhu et al. Apr 1999
US5650015 Nippon Sanso Corporation Ichizo Kobayashi Jul 1997
EP1511073 INTEL CORPORATION Justin K. Brask et al. Mar 2005
EP1014433 National Institute of Advanced Industrial Science and Technology SEKIYA, Akira, Nat. Inst. Materials et al. Apr 2009
EP0795896 ROHM Co., Ltd. Kamisawa, Akira, et al. Sep 1997
EP0823726 SIEMENS AKTIENGESELLSCHAFT Hintermaier, Frank, Dr. et al. Feb 1998

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