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US5378501: Method for chemical vapor deposition of titanium nitride films at low temperatures

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Filing Information

Inventor(s) Robert F. Foster · Joseph T. Hillman ·
Assignee(s) None listed in document.
Primary Examiner Roy V. King ·
Application Number US8131900
Filing date 10/05/1993
Issue date 01/03/1995
Predicted expiration date 10/05/2013
U.S. Classifications 427/255.2  · 427/255.1  ·
International Classifications C23C 1600  ·
Kind CodeA
International Classifications 427255.2;255.1;255;255.5;248.1;314 ·
9 Claims, No Drawings


Abstract

Titianium nitride film is deposited upon a semi-conductor substrate by chemical vapor deposition of titanium tetrachloride, ammonia and a diluent at temperatures less than 550.degree. C. This is accomplished by minimizing the boundary layer thickness over the substrate.

Independent Claims | See all claims (9)

  1. 1. A method of chemical vapor deposition of titanium nitride onto a semiconductor substrate surface comprising the steps of:passing a gaseous reaction mixture of titanium tetrachloride, ammonia and a diluent over said substrate surface;maintaining said substrate surface at a temperature of 200.degree. C. to 500.degree. C.; andestablishing and maintaining a boundary layer of less than or equal to 4 cm over said substrate surface, thereby forming a layer of titanium nitride on said substrate surface.
  2. 9.9. A method of chemical vapor deposition of titanium nitride onto a semiconductor substrate having a first surface and an opposite second surface, said method comprising the steps offorcing a gaseous reactant mixture of titanium tetrachloride, ammonia and a diluent downwardly against said first surface,heating said second surface to a temperature of 350.degree. C. to 500.degree. C., androtating said substrate at a rate of 100 to 1500 rpm, maintaining a viscosity and flow rate of said gaseous reactant mixture to establish a boundary layer thickness of less than about 4 cmthereby forming a layer of titanium nitride on said first surface.

References Cited

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Other Publications

Pierson, "Handbook of Chemical Vapor Deposition (CVD), Principles, Technology and Applications", Noyes Publications (1992) pp. 225 and 263.
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McKee, M. A., et al., Growth of Highly Uniform, Reproducible InGaAs Films in a Multiwafer Rotating Disk Reactor by MOCVD, Journal of Crystal Growth 197, 1991, pp. 445-451.
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Tompa, G. S., et al., A Parametric Investigation of GaAs Epitaxial Growth Uniformity in a High Speen, Rotating-Disk MOCVD Reactor, Journal of Crystal Growth 93, 1988, pp. 220-227.

Referenced By

Document NumberAssigneeInventorsIssue/Pub Date
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US7204885 Micron Technology, Inc. Garo J. Derderian et al. Apr 2007
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Patent Family

Document NumberAssigneeInventorsIssue/Pub Date
CA2173480 MATERIALS RESEARCH CORP FOSTER ROBERT F et al. Apr 1995
EP0723601 MATERIALS RESEARCH CORPORATION Robert F. FOSTER et al. Jul 1996