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US5461011: Method for reflowing and annealing borophosphosilicate glass to prevent BPO.sub.4 crystal formation

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Filing Information

Inventor(s) Chen-Chiu Hsue · Edward Houn ·
Assignee(s) United Microelectronics Corporation ·
Attorney/Agent(s) George O. Saile ·
Primary Examiner Brian E. Hearn ·
Assistant Examiner Lynne A. Gurley ·
Application Number US8289650
Filing date 08/12/1994
Issue date 10/24/1995
Predicted expiration date 08/12/2014
U.S. Classifications 437/247  · 437/982  ·
International Classifications H01L 21324  ·
Kind CodeA
International Classifications 437982;247;240 ·
6 Claims, No Drawings


Abstract

A method of reflowing borophosphosilicate glass wherein wafers on a support that holds the wafers upright in spaced parallel relationship are introduced into a furnace. The wafers are heated to a temperature to achieve reflow while a main stream of heated inert gas is flowed over the wafers in a direction perpendicular to the planes of the substrates, while simultaneously an auxiliary stream of heated inert gas is flowed in a direction perpendicular to the main stream to prevent the formation of BPO.sub.4 crystals during reflow.

Independent Claims | See all claims (6)

  1. 1. A method of reflowing a borophosphosilicate glass layer on a semiconductor substrate that prevents the formation of BPO.sub.4 crystals comprising;introducing a plurality of semiconductor substrates on a support that holds the substrates in an upright spaced parallel relationship into a furnace chamber,heating the substrates to a temperature sufficiently high to achieve reflow,flowing a main stream of heated inert gas in the furnace over the substrates in a direction perpendicular to the planes of the substrates, andsimultaneously flowing auxiliary streams of heated inert gas in a direction perpendicular to the main stream across the substrate surfaces whereby the formation of BPO.sub.4 crystals is prevented during said reflow.

References Cited

U.S. Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
US4513026 Fujitsu Limited Miyamoto et al. Apr 1985
US4879253 Oki Electric Industry Co., Ltd. Wakamatsu Nov 1989
US5094984 Hewlett-Packard Company Liu et al. Mar 1992

Foreign Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
JP0044033Feb 1991
JP1273630Dec 1991
JP4102324Apr 1992
JP3013406Jan 1993

Other Publications

Wolf et al., vol. II, Silicon Processing for the VLSI Era, Lattice Press, 1990, pp. 104-105, 194-197, 334-335.

Referenced By

Document NumberAssigneeInventorsIssue/Pub Date
US6169026 Hyundai Electronics Industries Co., Ltd. In Ok Park et al. Jan 2001

Patent Family

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