Filing Information

Inventor(s)	Chen-Chiu Hsue · Edward Houn ·
Assignee(s)	United Microelectronics Corporation ·  View assignee updates
Attorney/Agent(s)	George O. Saile ·
Primary Examiner	Brian E. Hearn ·
Assistant Examiner	Lynne A. Gurley ·
Application Number	US8289650
Filing date	08/12/1994
Issue date	10/24/1995
Predicted expiration date	08/12/2014
U.S. Classifications	437/247  · 437/982  ·
International Classifications	H01L 21324  ·
Kind Code	A
International Classifications	437982;247;240 ·

Patent Family

Abstract

A method of reflowing borophosphosilicate glass wherein wafers on a support that holds the wafers upright in spaced parallel relationship are introduced into a furnace. The wafers are heated to a temperature to achieve reflow while a main stream of heated inert gas is flowed over the wafers in a direction perpendicular to the planes of the substrates, while simultaneously an auxiliary stream of heated inert gas is flowed in a direction perpendicular to the main stream to prevent the formation of BPO.sub.4 crystals during reflow.

Independent Claims | See all claims (6)

1. 1. A method of reflowing a borophosphosilicate glass layer on a semiconductor substrate that prevents the formation of BPO.sub.4 crystals comprising;introducing a plurality of semiconductor substrates on a support that holds the substrates in an upright spaced parallel relationship into a furnace chamber,heating the substrates to a temperature sufficiently high to achieve reflow,flowing a main stream of heated inert gas in the furnace over the substrates in a direction perpendicular to the planes of the substrates, andsimultaneously flowing auxiliary streams of heated inert gas in a direction perpendicular to the main stream across the substrate surfaces whereby the formation of BPO.sub.4 crystals is prevented during said reflow.