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US5461011: Method for reflowing and annealing borophosphosilicate glass to prevent BPO.sub.4 crystal formation
6 Claims, No Drawings
A method of reflowing borophosphosilicate glass wherein wafers on a support that holds the wafers upright in spaced parallel relationship are introduced into a furnace. The wafers are heated to a temperature to achieve reflow while a main stream of heated inert gas is flowed over the wafers in a direction perpendicular to the planes of the substrates, while simultaneously an auxiliary stream of heated inert gas is flowed in a direction perpendicular to the main stream to prevent the formation of BPO.sub.4 crystals during reflow.
- 1. A method of reflowing a borophosphosilicate glass layer on a semiconductor substrate that prevents the formation of BPO.sub.4 crystals comprising;introducing a plurality of semiconductor substrates on a support that holds the substrates in an upright spaced parallel relationship into a furnace chamber,heating the substrates to a temperature sufficiently high to achieve reflow,flowing a main stream of heated inert gas in the furnace over the substrates in a direction perpendicular to the planes of the substrates, andsimultaneously flowing auxiliary streams of heated inert gas in a direction perpendicular to the main stream across the substrate surfaces whereby the formation of BPO.sub.4 crystals is prevented during said reflow.
U.S. Patent Documents
Foreign Patent Documents
|Wolf et al., vol. II, Silicon Processing for the VLSI Era, Lattice Press, 1990, pp. 104-105, 194-197, 334-335.|
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