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US5609511: Polishing method

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Filing Information

Inventor(s) Shigeo Moriyama · Yoshio Kawamura · Yoshio Homma · Kikuo Kusukawa · Takeshi Furusawa ·
Assignee(s) Ltd. Hitachi ·
Attorney/Agent(s) Antonelli, Terry, Stout & Kraus, LLP ·
Primary Examiner Bruce M. Kisliuk ·
Assistant Examiner Derris Banks ·
Application Number US8421247
Filing date 04/13/1995
Issue date 03/11/1997
Predicted expiration date 04/13/2015
U.S. Classifications 451/5  · 451/8  ·
International Classifications B24B 4900  ·
Kind CodeA
International Classifications 4515;6;7;8;10;21;41;42;53;54;55;60;63;259;283;285;287;288;289;290;364;384;397;402 ·
Foreign Priority JP6075625 - 04/14/1994 ·
13 Claims, No Drawings


Abstract

Disclosed is a method of polishing a thin film layer to be polished, which is formed on the surface of a substrate, by pressing the substrate on the surface of a polishing pad and relatively moving the substrate and the polishing pad, the method comprising the steps of: detecting the position of a front surface of the thin film layer to be polished using a first sensor and also detecting the position of a bottom surface of the thin film layer using a second sensor, on the way of the polishing; calculating the residual thickness of the thin film layer on the basis of the detected positions of the front and bottom surfaces of the thin film layer; and controlling the processing condition of the subsequent polishing on the basis of the calculated residual thickness of the thin film layer.

Independent Claims | See all claims (13)

  1. 1. A method of polishing a thin film layer to be polished, which is formed on the surface of a substrate, by pressing said substrate on the surface of a polishing pad and relatively moving said substrate and said polishing pad, said method comprising the steps of:detecting the position of a front surface of said thin film layer to be polished using a first sensor and also detecting the position of a bottom surface of said thin film layer using a second sensor, on the way of said polishing;calculating the residual thickness of said thin film layer on the basis of the detected positions of the front and bottom surfaces of said thin film layer; andcontrolling the processing condition of the subsequent polishing on the basis of the calculated residual thickness of said thin film layer.
  2. 10. A method of polishing a thin film layer to be polished, which is formed on the surface of a substrate, by pressing said substrate on the surface of a polishing pad and relatively moving said substrate and said polishing pad. said method comprising the steps of:directly detecting the distance from the position of a front surface of said thin film layer to be polished to the position of a bottom surface of said thin film layer using a sensor on the way of said polishing;calculating the residual thickness of said thin film layer on the basis of said detected distance; andcontrolling the processing condition of the subsequent polishing on the basis of the calculated residual thickness of said thin film layer;wherein said sensor is provided on the side of said polishing pad in such a manner as to face the surface of said substrate, and the distance between the positions of the front and bottom surfaces of said thin film layer is directly detected as a differential value between the distance from said detector to the front surface of said thin film layer and the distance from said detector to the bottom surface of said thin film layer.

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Foreign Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
EP460384Apr 1991

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