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Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material

Filing Information

Patent Number: US5998925
Application Number: US8902725
Filing date: 07/29/1997
Issue date: 12/07/1999
Predicted expiration date: 07/29/2017

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Inventor(s): Yoshinori Shimizu · Kensho Sakano · Yasunobu Noguchi · Toshio Moriguchi ·
Assignee(s): Nichia Kagaku Kogyo Kabushiki Kaisha · View assignee updates
Attorney/Agent(s): Birch, Stewart, Kolasch & Birch, LLP ·
Primary Examiner: Vip Patel ·
Assistant Examiner: Michael J. Smith ·

U.S. Classifications: 313/503 · 313/498 ·
International Classifications: H01J 162 ·
International Classifications: 313498;503;501;502 ·
Foreign Priority: JP8198585 - 07/29/1996 · JP8244339 - 09/17/1996 · JP8245381 - 09/18/1996 · JP8359004 - 12/27/1996 · JP9081010 - 03/31/1997 ·

Abstract

The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.

References Cited

U.S. Patent Documents

Document Number	Assignees	Inventors	Issue/Pub Date
US3699478	BELL TELEPHONE LABOR INC	Pinnow et al.	Oct 1972
US4298820	U.S. Philips Corporation	Bongers et al.	Nov 1981
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Foreign Patent Documents

Document Number	Assignees	Issue/Pub Date
JP5043913	TAKAURA SEISAKUSHO JUGEN	Apr 1975
JP554898		Jan 1980
JP6220237	KANEBO LTD	Jan 1987
JP1179471		Jul 1989
JP5152609	NICHIA KAGAKU KOGYO KK	Jun 1993
JP7099345		Apr 1995
JP7176794	NICHIA KAGAKU KOGYO KK	Jul 1995
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JP9027642	CLARION CO LTD	Jan 1997

Other Publications

"A New Phosphor for Frying-Spot Cathode-Ray Tubes for Color Television: Yellow-Emitting Y.sub.3 a1.sub.5 O.sub.12 -Ce.sup.3+ ", G. Glasse et al., Applied Physics Letters, vol. 11, No. 2, pp. 53-54 (1967).

"Improved color rendition in high pressure mercury vapor lamps", Mary V. Hoffman, Journal of IES, pp. 89-91 (1977).

S. Nakamura, SPIE, 3002:26-35 (1997).

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Patent Family

Document Number	Assignee	Inventors	Issue/Pub Date
WO199805078	NICHIA KAGAKU KOGYO KABUSHIKI	SHIMIZU YOSHINORI et al.	Feb 1998
CA2262136	NICHIA KAGAKU KOGYO KK	SHIMIZU YOSHINORI et al.	Feb 1998
AU3635597	NICHIA KAGAKU KOGYO KABUSHIKI	SHIMIZU YOSHINORI et al.	Feb 1998
US5998925	Nichia Kagaku Kogyo Kabushiki Kaisha	Yoshinori Shimizu et al.	Dec 1999
BR9710792	NICHIA KAGAKU KOGYO KK	SHIMIZU YISHINORI et al.	Jan 2000
AU720234	NICHIA KAGAKU KOGYO KK	SHIMIZU YOSHINORI et al.	May 2000
KR20000029696	NICHIA KAGAKU KOGYO KABUSHIKI	SHIMIZU YOSHINORI et al.	May 2000
CN1268250	NICHIA KAGAKU KOGYO KABUSHIKI	YOSHINORI SHIMIZU et al.	Sep 2000
DE69702929	NICHIA KAGAKU KOGYO KK	SHIMIZU YOSHINORI et al.	Sep 2000
DK0936682	NICHIA KAGAKU KOGYO KK	SHIMIZU YOSHINORI et al.	Oct 2000

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Independent Claims | See all claims (23)

1. A light emitting device, comprising a light emitting component and a phosphor capable of absorbing a part of light emitted by the light emitting component and emitting light of wavelength different from that of the absorbed light; wherein said light emitting component comprises a nitride compound semiconductor represented by the formula: In.sub.i Ga.sub.j Al.sub.k N where 0.ltoreq.i, 0.ltoreq.j, 0.ltoreq.k and i+j+k=1 and said phosphor contains a garnet fluorescent material comprising 1) at least one element selected from the group consisting of Y, Lu, Se, La, Gd and Sm, and 2) at least one element selected from the group consisting of Al, Ga and In, and being activated with cerium.
14. A light emitting diode comprising:a mount lead having a cup and a lead;an LED chip mounted in the cup of the mount lead with one of electrodes being electrically connected to the mount lead;a transparent coating material filling the cup to cover the LED chip; anda light emitting diode having a molding material which covers the LED chip covered with the coating material including the cup of the mount lead, the inner lead and another electrode of the LED chip, whereinthe LED chip is a nitride compound semiconductor and the coating material contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, at least one element selected from the group consisting of Al, Ga and In and a phosphor made of garnet fluorescent material activated with cerium.
23.23. A white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of the light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and wherein the main emission peak of the light emitting component is set within the range from 400 nm to 530 nm and the main emission wavelength of the phosphor is set to be longer than the main emission peak of the light emitting component.

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