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US6038124: Aluminum electrode foil for electrolytic capacitor and electrolytic capacitor using the foil
Filing Information
Patent Family
23 Claims, No Drawings
Abstract
An aluminum electrode foil for an electrolytic capacitor has a sponge-like etching layer formed on at least one of the surfaces thereof, and the sponge-like etching layer is reduced in a direction of thickness. The aluminum density of the reduced sponge-like etching layer `d2` is set from 0.8 to 2.2 g/cm.sup.3.
- 1. An aluminum electrode foil for an electrolytic capacitor characterized in that a sponge-like etching layer is formed on at least one surface of said foil, said sponge-like etching layer is reduced in the direction of thickness, and aluminum density of said sponge-like etching layer after reduction `d2` is set from 0.8 to 2.2 g/cm.sup.3.
- 12. An aluminum electrode foil for an electrolytic capacitor characterized in that a sponge-like etching layer is formed on at least one surface of said foil, said sponge-like etching layer is reduced in the direction of thickness, aluminum density of said sponge-like etching layer before reduction `d1` is set at 0.6 g/cm.sup.3 to 1.0 g/cm.sup.3, and aluminum density of said sponge-like etching layer after reduction `d2` is set from 0.8 to 2.2 g/cm.sup.3.
- 13. An aluminum electrode foil for an electrolytic capacitor characterized in that a sponge-like etching layer is formed on at least one surface of said foil, said sponge-like etching layer is reduced in the direction of thickness, aluminum density of said sponge-like etching layer after reduction `d2` is set from 0.8 to 2.2 g/cm.sup.3, and a ratio `d2/d1` of the aluminum density of said sponge-like etching layer after reduction `d2` to that of said layer before reduction `d1` is from 1.2 to 3.7.
- 14. An aluminum electrode foil for an electrolytic capacitor characterized in that a sponge-like etching layer is formed on at least one surface of said foil, said sponge-like etching layer is reduced in the direction of thickness, aluminum density of said sponge-like etching layer before reduction `d1` is 0.6 g/cm.sup.3 to 1.0 g/cm.sup.3, aluminum density of said sponge-like etching layer after reduction `d2` is set from 0.8 to 2.2 g/cm.sup.3, and a ratio `d2/d1` of aluminum density of said sponge-like etching layer after reduction `d2` to that of said layer before reduction `d1` is from 1.2 to 3.7.
- 15. An aluminum electrode foil for an electrolytic capacitor characterized in that a sponge-like etching layer is formed on at least one surface of said foil, said sponge-like etching layer is reduced in the direction of thickness, aluminum density of said sponge-like etching layer after reduction `d2` is set from 0.8 to 2.2 g/cm.sup.3, and annealing is carried out at a temperature from 200 to 500.degree. C. after reduction.
- 16. An aluminum electrode foil for an electrolytic capacitor characterized in that a sponge-like etching layer is formed on at least one surface of said foil, said sponge-like etching layer is reduced in the direction of thickness, aluminum density of said sponge-like etching layer before reduction `d1` is 0.6 g/cm.sup.3 to 1.0 g/cm.sup.3, aluminum density of said sponge-like etching layer after reduction `d2` is set from 0.8 to 2.2 g/cm.sup.3, and annealing is carried out at a temperature from 200 to 500.degree. C. after reduction.
- 17. An aluminum electrode foil for an electrolytic capacitor characterized in that a sponge-like etching layer is formed on at least one surface of said foil, said sponge-like etching layer is reduced in the direction of thickness, aluminum density of said sponge-like etching layer after reduction `d2` is set from 0.8 to 2.2 g/cm.sup.3, a ratio `d2/d1` of aluminum density of said sponge-like etching layer after reduction `d2` to that of the layer before reduction `d1` is from 1.2 to 3.7, and annealing is carried out after reduction at a temperature from 200 to 500.degree. C.
- 18. An aluminum electrode foil for an electrolytic capacitor characterized in that a sponge-like etching layer is formed on at least one surface of said foil, said sponge-like etching layer is reduced in the direction of thickness, aluminum density of said sponge-like etching layer before reduction `d1` is 0.6 g/cm.sup.3 to 1.0 g/cm.sup.3, aluminum density of said sponge-like etching layer after reduction `d2` is set from 0.8 to 2.2 g/cm.sup.3, a ratio `d2/d1` of aluminum density of said sponge-like etching layer after reduction `d2` to that of said layer before reduction `d1` is from 1.2 to 3.7, and annealing is carried out at a temperature of 200 to 500.degree. C. after reduction.
- 20. An electrolytic capacitor using an aluminum foil as an electrode material, wherein said aluminum foil has a sponge-like etching layer formed on at least one surface thereof, said sponge-like etching layer is reduced in the direction of thickness and aluminum density of said sponge-like etching layer after reduction `d2` is set form 0.8 to 2.2 g/cm.sup.3.
- 21. An electrolytic capacitor using an aluminum roil as an electrode material, wherein said aluminum foil has a sponge-like etching layer formed on at least one surface thereof, said sponge-like etching layer is reduced in the direction of thickness, aluminum density of said sponge-like etching layer before reduction `d1` is 0.6 g/cm.sup.3 to 1.0 g/cm.sup.3, and aluminum density of said sponge-like etching layer after reduction `d2` is set from 0.8 to 2.2 g/cm.sup.3.
- 22. An electrolytic capacitor using an aluminum foil as an electrode material, wherein said aluminum foil has a sponge-like etching layer formed on at least one surface thereof, said sponge-like etching layer is reduced in the direction of thickness, aluminum density of said sponge-like etching layer after reduction `d2` is set from 0.8 to 2.2 g/cm.sup.3, and a ratio `d2/d1` of aluminum density of said sponge-like etching layer after reduction `d2` to that of said layer before reduction `d1` is from 1.2 to 3.7.
- 23.23. An electrolytic capacitor using an aluminum foil as an electrode material, wherein said aluminum foil has a sponge-like etching layer formed on at least one surface thereof, said sponge-like etching layer is reduced in the direction of thickness, aluminum density of said sponge-like etching layer before reduction `d1` is 0.6 g/cm.sup.3 to 1.0 g/cm.sup.3, aluminum density of said sponge-like etching layer after reduction `d2` is set from 0.8 to 2.2 g/cm.sup.3, and a ratio `d2/d1` of aluminum density of said sponge-like etching layer after reduction `d2` to that of said layer before reduction `d1` is from 1.2 to 3.7.
References Cited
U.S. Patent Documents
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