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US6121647: Film structure, electronic device, recording medium, and process of preparing ferroelectric thin films

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Filing Information

Inventor(s) Yoshihiko Yano · Takao Noguchi ·
Assignee(s) TDK Corporation ·
Attorney/Agent(s) Oblon, Spivak, McClelland, Maier & Neustadt, P.C. ·
Primary Examiner Olik Chaudhuri ·
Assistant Examiner Howard Weiss ·
Application Number US8883456
Filing date 06/26/1997
Issue date 09/19/2000
Predicted expiration date 06/26/2017
U.S. Classifications 257/295  · 257/310  ·
International Classifications H01L 2976  ·
Kind CodeA
International Classifications 257295;310 ·
Foreign Priority JP8186625 - 06/26/1996 ·
12 Claims, No Drawings


Abstract

In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8.ltoreq.(Pb+Rn)/Ti.ltoreq.1.3 and 0.5.ltoreq.Pb/(Pb+Rn).ltoreq.0.99, has a perovskite type crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation. The ferroelectric thin film can be formed on a silicon (100) substrate, typically by evaporating lead oxide and TiOx in a vacuum chamber while introducing an oxidizing gas therein.

Independent Claims | See all claims (12)

  1. 1. A film structure comprising a substrate and a ferroelectric thin film formed on one surface of said substrate, whereinsaid ferroelectric thin film contains R.sub.1 which is at least one rare earth element selected from the group consisting of Pr, Nd, Eu, Tb, Dy, Ho, Yb, Y, Sm, Gd, and Er, lead, titanium, and oxygen in an atomic ratio in the range:0.8.ltoreq.(Pb+R.sub.1)/Ti.ltoreq.1.3 and0.5.ltoreq.Pb/(Pb+R.sub.1).ltoreq.0.99, has a perovskite crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation.
  2. 10. A film structure comprising a substrate and a ferroelectric thin film formed on one surface of said substrate, whereinthe surface of said substrate on which said ferroelectric thin film is formed has a silicon (100) plane,said ferroelectric thin film contains R.sub.2 which is at least one rare earth element selected from the group consisting of Pr, Nd, Eu, Tb, Dy, Ho, Yb, Y, Sm, Gd, Er, and La, lead, titanium, and oxygen in an atomic ratio in the range:0.8.ltoreq.(Pb+R.sub.2)/Ti.ltoreq.1.3 and0.5.ltoreq.Pb/(Pb+R.sub.2).ltoreq.0.99, has a perovskite crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation.

References Cited

U.S. Patent Documents

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Foreign Patent Documents

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Other Publications

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B. Panda, et al., J. Appl. Phys., vol. 79, No. 2, pp. 1008-1012, Jan. 15, 1996, "Electron Beam Deposited Lead-Lanthanum-Ziconate-Titanate Then Films For Silicon Based Device Applications".
Satoshi Yamauachi, et al., J. Appl. Phys. vol. 35, pp. 1553-1556, 1996, "Growth if [11 ]--Oriented Lead Zirconate Titanate Thin Film Smooth Surface To Improve Electrical Properties".

Referenced By

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Patent Family

Document NumberAssigneeInventorsIssue/Pub Date
US6121647 TDK Corporation Yoshihiko Yano et al. Sep 2000
JP3193302 Jul 2001