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US6300212: Method of fabricating semiconductor device having memory capacitor including ferroelectric layer made of composite metal oxide

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Filing Information

Inventor(s) Naoya Inoue · Yoshihiro Hayashi ·
Assignee(s) NEC Corporation ·
Attorney/Agent(s) Foley & Lardner ·
Primary Examiner David Nelms ·
Assistant Examiner David Nhu ·
Application Number US9124067
Filing date 07/29/1998
Issue date 10/09/2001
Predicted expiration date 07/29/2018
U.S. Classifications 438/396  · 438/3  ·
International Classifications --
Kind CodeB1
International Classifications 438 3 · 438240 · 438393 · 438241 · 438253 · 438396 ·
Foreign Priority JP9203127 - 07/29/1997 ·
34 Claims, 9 Drawings


Abstract

In a method and an apparatus for manufacturing a semiconductor device which has a capacitor consisting of a layered structure of a lower electrode, a ferroelectric layer made of a composite metal oxide such as PZT and an upper electrode in a predetermined region on a semiconductor substrate, the lower electrode, the ferroelectric layer and the upper electrode are successively formed in an atmosphere isolated from the air. For the duration after forming the ferroelectric layer till starting the formation of the upper electrode, it is desirable to introduce a gas such as an inert gas or an inert gas with oxygen into the atmosphere in the vicinity of the substrate to keep the atmosphere within a predetermined pressure range.

Independent Claims | See all claims (34)

  1. 1. A method for manufacturing a semiconductor device which has a capacitor including a layered structure of a lower electrode layer, a ferroelectric layer made of a composite metal oxide and an upper electrode layer in a predetermined region on a semiconductor substrate, comprising: forming said lower electrode layer above a semiconductor substrate in a lower electrode forming apparatus; transferring said semiconductor substrate from said lower electrode forming apparatus to a ferroelectric layer forming apparatus; forming said ferroelectric layer on said lower electrode layer in said ferroelectric layer forming apparatus; transferring said semiconductor substrate from said ferroelectric layer forming apparatus to an upper electrode forming apparatus without exposing to air; and forming said upper electrode layer on said ferroelectric layer in said upper electrode forming apparatus, wherein, at least in duration after forming said ferroelectric layer and until starting forming said upper electrode layer, a gas is introduced into the atmosphere in the vicinity of said substrate to keep the atmosphere within a predetermined pressure range.
  2. 12. A method for manufacturing a semiconductor device, wherein a layer of lead titanate zirconate is formed at a substrate temperature at which pyrochlore structure is obtained, and then a thermal treatment is performed in an atmosphere of oxygen, an inert gas or a mixture gas of oxygen and an inert gas at a temperature higher than the substrate temperature upon forming said layer so that said film changes in phase from said pyrochlore structure to perovskite structure.
  3. 14. A method for manufacturing a semiconductor device which has a capacitor including a layered structure of a lower electrode layer, a ferroelectric layer made of a composite metal oxide and an upper electrode layer in a predetermined region on a semiconductor substrate, comprising: forming said lower electrode layer above a semiconductor substrate in a lower electrode forming apparatus; transferring said semiconductor substrate from said lower electrode forming apparatus to a substrate exchange chamber; transferring said semiconductor substrate from said substrate exchange chamber to a ferroelectric layer forming apparatus; forming said ferroelectric layer on said lower electrode layer in said ferroelectric layer forming apparatus; transferring said semiconductor substrate from said ferroelectric layer forming apparatus to said substrate exchange chamber; transferring said semiconductor substrate from said substrate exchange chamber to an upper electrode forming apparatus; and forming said upper electrode layer on said ferroelectric layer in said upper electrode forming apparatus; wherein a pressure of said ferroelectric layer forming apparatus and that of said substrate exchange chamber is substantially equal during transferring said semiconductor substrate from said ferroelectric layer forming apparatus to said substrate exchange chamber, wherein, at least in duration after forming said ferroelectric layer and until starting forming said upper electrode layer, a gas is introduced into the atmosphere in the vicinity of said substrate to keep the atmosphere within a predetermined pressure range.
  4. 22. A method for manufacturing a semiconductor device which has a capacitor including a layered structure of a lower electrode layer, a ferroelectric layer made of a composite metal oxide and an upper electrode layer in a predetermined region on a semiconductor substrate, comprising: forming said lower electrode layer above a semiconductor substrate; forming said ferroelectric layer on said lower electrode layer with a high-frequency electric power, an electric power of said high-frequency electric power at a start of forming said ferroelectric layer is lower than that at an end of forming said ferroelectric layer; and forming said upper electrode layer on said ferroelectric layer in said upper electrode forming apparatus, wherein, at least in duration after forming said ferroelectric layer and until starting forming said upper electrode layer, a gas is introduced into the atmosphere in the vicinity of said substance to keep the atmosphere within a predetermined pressure range.

References Cited

U.S. Patent Documents

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US4001102* The Carborundum Company Batha et al. Jan 1977
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US5443030* Sharp Kabushiki Kaisha Ishihara et al. Aug 1995
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Foreign Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
JP479266Mar 1992
JP480959Mar 1992
JP4113621Apr 1992
JP563153Mar 1993
JP5206382Aug 1993
JP714986Jan 1995
JP7172996Jul 1995
JP8250503Sep 1996
JP927601Jan 1997
JP951077Feb 1997
JP945877Feb 1997
JP9107079Apr 1997
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* cited by examiner

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