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US6455423: Direct writing of low carbon conductive material

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Filing Information

Inventor(s) Eugene P. Marsh ·
Assignee(s) Micron Technology, Inc. ·
Attorney/Agent(s) Mueting, Raasch & Gebhardt, P.A. ·
Primary Examiner Caridad Everhart ·
Application Number US9886332
Filing date 06/21/2001
Issue date 09/24/2002
Predicted expiration date 09/03/2018
U.S. Classifications 438/674  · 204/492.21  · 118/640  · 438/4  ·
International Classifications --
Kind CodeB2
International Classifications 438 4 · 438681 · 438686 · 438674 · 438676 · 438678 · 427252 · 427554 · 118640 · 118621 · 20429818 · 20429802 · 2504923 · 2504922 · 25049221 ·
Related U.S. Application DataThis is a continuation of application Ser. No. 09/146,292, filed Sep. 3, 1998 now U.S. Pat. No. 6,261,850, which is incorporated herein by reference.
26 Claims, 4 Drawings


Abstract

A method for providing a low carbon and/or low oxygen containing conductive material includes providing a substrate assembly having a surface and providing a stream of a precursor containing conductive material to a region proximate the surface of the substrate assembly where the conductive material is to be deposited. A stream of reaction gas is also provided to the region proximate the surface of the substrate assembly where the conductive material is to be deposited. The reaction gas is one of an oxygen or hydrogen containing gas. A focused beam is scanned over the surface of the substrate assembly in the presence of the stream of precursor containing conductive material and the stream of the reaction gas to deposit the conductive material on the surface. The stream of the precursor containing conductive material may include a stream of a precursor containing one of platinum, palladium, rhodium, ruthenium, chromium, silver, and iridium; preferably platinum. Further, the stream of the reaction gas may include a stream of a reaction gas including at least one gas selected from the group of H2, NH3, O2, O3, NO, N2O, H2O2, and R2O2. The method is particularly advantageous in line repair.

Independent Claims | See all claims (26)

  1. 1. A method for providing a conductive material, the method comprising: providing a substrate assembly having a surface; simultaneously providing a platinum containing precursor and an oxygen containing gas to a region proximate the surface of the substrate assembly where platinum is to be deposited; and directing a focused beam towards the surface of the substrate assembly in the presence of the platinum containing precursor and the oxygen containing gas in the region proximate the surface of the substrate assembly to deposit the platinum on the surface.
  2. 4. The method of claim wherein the platinum deposited on the surface is a low carbon platinum, wherein an amount of carbon present in the low carbon platinum is about 1.0 percent or less by weight.
  3. 6. The method of claim wherein directing a focused beam towards the surface of the substrate assembly comprises directing a focused metal ion beam towards the surface of the substrate assembly.
  4. 10. A system for use in providing a conductive material, the system comprising: a chamber in which to position a substrate assembly having a surface; a precursor delivery system comprising: a precursor source to provide a platinum containing precursor; and a precursor delivery apparatus operable to deliver the platinum containing precursor to a region proximate the surface of the substrate assembly where platinum is to be deposited when the substrate assembly is positioned in the chamber; a gas source delivery system comprising: a gas source to provide an oxygen containing gas; and a gas delivery apparatus operable to deliver the oxygen containing gas to the region proximate the surface of the substrate assembly where platinum is to be deposited when the substrate assembly is positioned in the chamber; an apparatus operable to control the precursor delivery apparatus and the gas delivery apparatus such that the platinum containing precursor and the oxygen containing gas are simultaneously delivered to the region proximate the surface of the substrate assembly where platinum is to be deposited when the substrate assembly is positioned in the chamber; and a focused beam apparatus operable to direct a focused beam towards the surface of the substrate assembly in the presence of the platinum containing precursor and the oxygen containing gas in the region proximate the surface of the substrate assembly to deposit the platinum on the surface when the substrate assembly is positioned in the chamber.
  5. 19. A method for direct writing a conductive material, the method comprising: providing a substrate assembly having a surface; providing a precursor comprising conductive material to a region proximate the surface of the substrate assembly where the conductive material is to be deposited; providing an oxygen containing gas; and directing a focused beam towards the surface of the substrate assembly in the presence of the precursor comprising conductive material and an oxygen containing gas proximate the surface of the substrate assembly to form the conductive material on the surface.

References Cited

U.S. Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
US4876112 Seiko Instruments Inc. Kaito et al. Oct 1989
US4962059 Mitsubishi Denki Kabushiki Kaisha Nishioka et al. Oct 1990
US5004927 Fujitsu Limited Nakagawa Apr 1991
US5086230 Seiko Instruments & Electronics Ltd. Adachi et al. Feb 1992
US5104684 Massachusetts Institute of Technology Tao et al. Apr 1992
US5188705 FEI Company Swanson et al. Feb 1993
US5281447 International Business Machines Corporation Brady et al. Jan 1994
US5376791 FEI Company Swanson et al. Dec 1994
US5378508 Akzo Nobel N.V. Castro et al. Jan 1995
US5429730* Kabushiki Kaisha Toshiba Nakamura et al. Jul 1995
US5429994 Mitsubishi Denki Kabushiki Kaisha Ishikawa Jul 1995
US5480684 Micron Technology, Inc. Sandhu Jan 1996
US5541411 FEI Company Lindquist et al. Jul 1996
US5581436 Texas Instruments Incorporated Summerfelt et al. Dec 1996
US5591970* Kabushiki Kaisha Toshiba Komano et al. Jan 1997
US5661115 Micron Technology, Inc. Sandhu Aug 1997
US5783716 Advanced Technology Materials, Inc. Baum Jul 1998
US5929267 Kabushikikaisha Kojundokagaku Kenkyusho Kadokura Jul 1999
US6204172 Micron Technology, Inc. Marsh Mar 2001
US6261850 Micron Technology, Inc. Marsh Jul 2001
* cited by examiner

Other Publications

Tao, et al. “Focused ion beam induced deposition of platinum” J. Vac. Sci. Technol. B 8(6) Nov./Dec. 1990 p. 1826-1829.*
Blauner, et al. “Focused ion beam fabrication of submicron gold structures” J. Vac. Sci. Technol. b 7(4) Jul./Aug. 1989 p. 609-617.*
Abstract, Nogar et al., “Laser deposition and laser modification of high-temperature superconducting thin films” (Mar. 1998).
Kwon et al., “Characterization of Pt Thin Films Deposited by Metallorganic Chemical Vapor Deposition for Ferroelectric Bottom Electrodes”,
Nanofab focused ion beam system. Description online. FAI, 1998 retrieved on Aug. 6, 1998. Retrieved from the Internet:.
Tao et al., “Focused ion beam induced deposition of platinum”,

Referenced By

Document NumberAssigneeInventorsIssue/Pub Date
US7560815 Micron Technology, Inc. Brian A. Vaartstra et al. Jul 2009
US8461682 --

Patent Family

Document NumberAssigneeInventorsIssue/Pub Date
US6261850 Micron Technology, Inc. Eugene P. Marsh Jul 2001
US6455423 Micron Technology, Inc. Eugene P. Marsh Sep 2002