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US6495458: Method for producing low carbon/oxygen conductive layers

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Filing Information

Inventor(s) Eugene P. Marsh ·
Assignee(s) Micron Technology, Inc. ·
Attorney/Agent(s) Mueting, Raasch & Gebhardt, P.A. ·
Primary Examiner Tuan H. Nguyen ·
Application Number US9923851
Filing date 08/07/2001
Issue date 12/17/2002
Prior Publication Data
Predicted expiration date 09/03/2018
U.S. Classifications 438/681  · 427/250  · 438/903  · 438/680  · 436/37  · 438/14  ·
International Classifications --
Kind CodeB2
International Classifications 438 14 · 438 16 · 438 17 · 438 18 · 438680 · 438681 · 438580 · 438581 · 438582 · 438583 · 438903 · 438758 · 438 3 · 427250 · 42725519 · 42725523 · 42725528 · 42725531 · 42725532 · 42725536 · 436 37 · 436 73 · 436 76 ·
Related U.S. Application DataThis is a division of application Ser. No. 09/146.297, filed Sep. 3, 1998, now U.S. Pat. No. 6,284,655, which is incorporated herein by reference.
8 Claims, 3 Drawings


Abstract

The present invention provides a method for forming a substantially carbon- and oxygen-free conductive layer, wherein the layer can contain a metal and/or a metalloid material. According to the present invention, a substantially carbon- and oxygen-free conductive layer is formed in an oxidizing atmosphere in the presence of an organometallic catalyst using, for example, a chemical vapor deposition process. Such layers are particularly advantageous for use in memory devices, such as dynamic random access memory (DRAM) devices.

Independent Claims | See all claims (8)

  1. 1. A method of optimizing components in a conductive layer comprising the steps of: (a) forming a conductive layer comprising the steps of providing a reactor chamber having a known concentration of oxygen in an oxidizing atmosphere; providing a substrate having a heated surface in the reactor chamber; supplying a fixed amount of a precursor to the reactor chamber; and supplying a fixed amount of an organometallic catalyst to the reactor chamber, wherein the conductive layer forms on the heated surface of the substrate; (b) analyzing the conductive layer for component amounts; and (c) repeating the steps (a) and (b) to form one or more additional conductive layers, wherein at least one of the fixed amount of the organometallic catalyst and the concentration of oxygen in the oxidizing atmosphere is varied in the formation of each of the one or more additional conductive layers until carbon is detected in one of the one or more additional conductive layers.

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Referenced By

Document NumberAssigneeInventorsIssue/Pub Date
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