Semiconductor light emitting device

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Filing Information

  • Patent Number: US6870191
  • Application Number: US10201600
  • Filing date: 07/24/2002
  • Issue date: 03/22/2005
  • Prior Publication Data:
  • Predicted expiration date: 07/24/2022
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  • U.S. Classifications: 257/79  · 257/113  · 257/14  · 257/678  · 257/13  ·
  • International Classifications: --
  • International Classifications: 257 79 · 257 88 · 257 96 · 257 97 · 257668 · 257678 ·
  • Foreign Priority: JPP2001223114 - 07/24/2001 · JPP2002041737 - 02/19/2002 · JPP2002213490 - 07/23/2002 ·
27 Claims, 16 Drawings


Abstract

A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

References Cited

U.S. Patent Documents

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Foreign Patent Documents

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JP2000332300UNISPLAY SANov 2000
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JP2001160539SANYO ELECTRIC CO LTDJun 2001
WO200141225CREE LIGHTING COMPANYJun 2001
* cited by examiner

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Independent Claims | See all claims (27)

  1. 1. A semiconductor light emitting device comprising a substrate, a plurality of semiconductor layers formed on said substrate and made of different materials from that of said substrate and an ohmic electrode formed on the surface of the top layer of said semiconductor layers so that light generated in said semiconductor layers is emitted from said ohmic electrode or from said substrate, wherein at least one recess and/or protruding portion for scattering or diffracting light generated in said semiconductor layers is created in the surface of said substrate and the cross section of said recess is in a form of a reversed trapezoid and the cross section of said protruding portion is in a form of a trapezoid.