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US6870191: Semiconductor light emitting device

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Filing Information

Inventor(s) Isamu Niki · Motokazu Yamada · Masahiko Sano · Shuji Shioji ·
Assignee(s) Nichia Corporation ·
Attorney/Agent(s) Morrison & Foerster LLP ·
Primary Examiner David Nelms ·
Assistant Examiner Mai-Huong Tran ·
Application Number US10201600
Filing date 07/24/2002
Issue date 03/22/2005
Prior Publication Data
Predicted expiration date 07/24/2022
U.S. Classifications 257/79  · 257/113  · 257/14  · 257/678  · 257/13  ·
International Classifications --
Kind CodeB2
International Classifications 257 79 · 257 88 · 257 96 · 257 97 · 257668 · 257678 ·
Foreign Priority JPP2001223114 - 07/24/2001 · JPP2002041737 - 02/19/2002 · JPP2002213490 - 07/23/2002 ·
27 Claims, 16 Drawings


Abstract

A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

Independent Claims | See all claims (27)

  1. 1. A semiconductor light emitting device comprising a substrate, a plurality of semiconductor layers formed on said substrate and made of different materials from that of said substrate and an ohmic electrode formed on the surface of the top layer of said semiconductor layers so that light generated in said semiconductor layers is emitted from said ohmic electrode or from said substrate, wherein at least one recess and/or protruding portion for scattering or diffracting light generated in said semiconductor layers is created in the surface of said substrate and the cross section of said recess is in a form of a reversed trapezoid and the cross section of said protruding portion is in a form of a trapezoid.

References Cited

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Foreign Patent Documents

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* cited by examiner

Referenced By

Document NumberAssigneeInventorsIssue/Pub Date
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