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US6882051: Nanowires, nanostructures and devices fabricated therefrom

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Filing Information

Inventor(s) Arun Majumdar · Ali Shakouri · Timothy D. Sands · Peidong Yang · Samuel S. Mao · Richard E. Russo · Henning Feick · Eicke R. Weber · Hannes Kind · Michael Huang · Haoquan Yan · Yiying Wu · Rong Fan ·
Assignee(s) The Regents of the University of California ·
Attorney/Agent(s) John P. O'Banion ·
Primary Examiner Michael S. Lebentritt ·
Assistant Examiner Brad Smith ·
Application Number US10112578
Filing date 03/29/2002
Issue date 04/19/2005
Prior Publication Data
Predicted expiration date 04/08/2022
Patent term adjustment 10
U.S. Classifications 257/746  · 257/734  · 257/741  ·
International Classifications --
Kind CodeB2
International Classifications 257734 · 257741 · 257746 · 257749 ·
Related U.S. Application DataCROSS-REFERENCE TO RELATED APPLICATIONS
This application claims priority from U.S. provisional application Ser. No. 60/280,676 filed on Mar. 30, 2001, incorporated herein by reference, and from U.S. provisional application Ser. No. 60/349,206 filed on Jan. 15, 2002, incorporated herein by reference.
21 Claims, 23 Drawings


Abstract

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Independent Claims | See all claims (21)

  1. 1. A nanowire, comprising: a first segment of a first material; and a second segment of a second material joined to said first segment; wherein at least one of said segments has a substantially uniform diameter of less than approximately 200 nm; and wherein said nanowire is selected from a population of nanowires having a substantially monodisperse distribution of diameters.
  2. 2. A nanowire, comprising: a first segment of a first material; and a second segment of a second material joined to said first segment; wherein at least one of said segments has a substantially uniform diameter; said nanowire displaying characteristics selected from the group consisting essentially of electronic properties, optical properties, physical properties, magnetic properties and chemical properties that are modified relative to the bulk characteristics of said first and second materials by quantum confinement effects.
  3. 3. A nanowire, comprising: a first segment of a first material; and a second segment of a second material joined to said first segment; wherein at least one of said segments has a substantially uniform diameter; said nanowire having at least one electronic property that varies as a function of diameter of said nanowire.
  4. 5. A nanowire, comprising: a first segment of a substantially crystalline material; and a second segment of a substantially crystalline material joined to said first segment; wherein at least one of said segments has a substantially uniform diameter of less than approximately 200 nm.
  5. 9. A nanowire superlattice structure, comprising: a first segment of a material; a second segment of a material joined to said first segment; and a third segment of a material joined to at least one of said first or second segments; wherein at least two of said segments are longitudinally adjacent; wherein at least two of said segments comprise compositionally different materials; and wherein at least one of said segments has a substantially uniform diameter of less than approximately 200 nm.
  6. 10. A nanowire superlattice structure, comprising: a first segment of a material; a second segment of a material joined to said first segment; and a third segment joined to at least one of said first or second segments; wherein at least two of said segments comprise compositionally different materials; and wherein at least two of said segments are longitudinally adjacent; said nanowire superlattice structure displaying characteristics selected from the group consisting essentially of electronic properties, optical properties, physical properties, magnetic properties and chemical properties that are modified relative to the bulk characteristics of said first and second materials by quantum confinement effects.
  7. 11. A nanowire supertattice structure, comprising: a first segment of a material; a second segment of a material joined to said first segment; and a third segment joined to at least one of said first or second segments; wherein at least two of said segments comprise compositionally different materials; and wherein at least two of said segments are longitudinally adjacent; said nanowire superlattice structure having at least one electronic property that varies as a function of diameter of at least one of said segments.
  8. 13. A nanowire superlattice structure, comprising: a first segment of a substantially crystalline material; a second segment at a substantially crystalline material joined to said first segment; and a third segment of a substantially crystalline material joined to at least one of said first or second segments; wherein at least two of said segments comprise compositionally different materials; wherein at least two of said segments are longitudinally adjacent; and wherein at least one of said segments has a substantially uniform diameter of less than approximately 200 nm.

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