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US6900498: Barrier structures for integration of high K oxides with Cu and Al electrodes

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Filing Information

Inventor(s) Gregory T. Stauf · Bryan C. Hendrix · Jeffrey F. Roeder · Ing-Shin Chen ·
Assignee(s) Advanced Technology Materials, Inc. ·
Attorney/Agent(s) Margaret Chappuis · Steven Hultquist, Esq. ·
Primary Examiner Hoai Pham ·
Assistant Examiner Thao X. Le ·
Application Number US9681609
Filing date 05/08/2001
Issue date 05/31/2005
Prior Publication Data
Predicted expiration date 01/16/2022
Patent term adjustment 253
U.S. Classifications 257/310  · 257/295  ·
International Classifications --
Kind CodeB2
International Classifications 257295-296 · 257751 · 257310 · 257763-764 · 257303 · 257306 · 438 3 ·
39 Claims, 4 Drawings


Abstract

An integrated circuit barrier structure disposed between high dielectric constant metal oxide and Cu or Al electrodes, for preventing diffusion of species such as oxygen, bismuth, or lead from the high dielectric constant metal oxide into the Cu or Al electrodes. Such barrier structure also protects the Cu or Al electrodes against oxidization during deposition of the high dielectric constant metal oxide. The barrier structure can be formed as (1) a single layer of Pt, Ir, IrO2, Ir2O3, Ru, RuO2, CuO, Cu2O, Al2O3, or a binary or ternary metal nitride, e.g., TaN, NbN, HfN, ZrN, WN, W2N, TiN, TiSiN, TiAlN, TaSiN, or NbAlN, or (2) double or triple layers of such materials, e.g., Pt/TiAlN, Pt/IrO2, Pt/Ir, Ir/TiAlN, Ir/IrO2, IrO2/TiAlN, IrO2/Ir, or IrO2/Ir2O3/Ir. Such barrier structures enable Cu or Al electrodes to be used in combination with high dielectric constant metal oxides in microelectronic structures such as ferroelectric stack and trench capacitors, non-volatile ferroelectric memory cells, and dynamic random access memory (DRAM) cells.

Independent Claims | See all claims (39)

  1. 1. A microelectronic structure comprising: at least one layer of high dielectric constant material comprising amorphous dielectric metal oxide having; (i) A voltage independent capacitance, (ii) a capacitance density of from about 1000 to 10,000 nF/cm2, and (iii) a current leakage of <10−7 A/cm2; at least one conductive barrier layer in contact with the layer of high dielectric constant material, wherein such conductive barrier layer comprises at least one material selected from the group consisting of Pt, Ir, IrO2, Ir2O3, Ru, RuO2, TaN, NbN, HfN, ZrN, WN, W2N, Tin, TiSiN, TiAIN, TaSin, NbAIN, and compatible combinations, mixtures and alloys thereof; at least one metal layer in contact with the conductive barrier layer, wherein said metal layer comprises metal or metal alloy including a material selected from the group consisting of Cu and Al; wherein said at least one conductive barrier layer is between said at least one layer of high dielectric constant material and said at least one metal layer.
  2. 39. A microelectronic structure comprising: at least one layer of high dielectric constant material; a first conductive barrier layer comprises IrO2, a second conductive barrier layer comprises Ir2O3, and a third conductive barrier layer compring Ir, wherein said first conductive barrier layer is in contact with the layer of high dielectric constant material, said second conductive barrier layer overlies said first conductive barrier layer, and said third conductive barrier layer overlies said second conductive barrier layer; at least one metal layer in contact with the third conductive barrier layer, wherein said metal layer comprises metal or metal alloy including a material selected from the group consisting of Cu or Al: wherein said first,second and third conductive barrier layers are between said at least one layer of high dielectric constant material and said at least one metal layer.

References Cited

U.S. Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
US5453908* Texas Instruments Incorporated Tsu et al. Sep 1995
US5617290* Texas Instruments Incorporated Kulwicki et al. Apr 1997
US5729054* Texas Instruments Incorporated Summerfelt et al. Mar 1998
US5929475 MATSUSHITA ELECTRONICS CORP Uemoto et al. Jul 1999
US5985731* Motorola, Inc. Weng et al. Nov 1999
US6168991 Lucent Technologies Inc. Choi et al. Jan 2001
US6171898* Texas Instruments Incorporated Crenshaw et al. Jan 2001
US6180446* Texas Instruments Incorporated Crenshaw et al. Jan 2001
US6180482* Samsung Electronics, Co., Ltd. Kang Jan 2001
US6184044* NEC Corporation Sone et al. Feb 2001
US6194754 Telcordia Technologies, Inc. Aggarwal et al. Feb 2001
US6200874* Micron Technology, Inc. Sandhu et al. Mar 2001
US6211005* Samsung Electronics Co., Ltd. Kang Apr 2001
US6211035* Texas Instruments Incorporated Moise et al. Apr 2001
US6281535* Agilent Technologies, Inc. Ma et al. Aug 2001
US6291292* Hyundai Electronics Industries Co., Ltd. Yang Sep 2001
US6294420* Texas Instruments Incorporated Tsu et al. Sep 2001
US6320213* Advanced Technology Materials, Inc. Kirlin et al. Nov 2001
US6358810* Applied Materials, Inc. Dornfest et al. Mar 2002
US6365517* Texas Instruments Incorporated Lu et al. Apr 2002
US6380579* Samsung Electronics Co., Ltd. Nam et al. Apr 2002
US6417537* Micron Technology, Inc. Yang et al. Jul 2002
US6462931* Texas Instruments Incorporated Tang et al. Oct 2002
US6593638* Texas Instruments Incorporated Summerfelt et al. Jul 2003
US20010040249* Jung Nov 2001
US20010044205* Gilbert et al. Nov 2001
US20020006674* Ma et al. Jan 2002
US20020072223* Gilbert et al. Jun 2002
* cited by examiner

Other Publications

U.S. Appl. No. 09/469,700, filed Dec. 22, 1999, Bryan C. Hendrix.

Patent Family

Document NumberAssigneeInventorsIssue/Pub Date
US20020167086 Bryan Hendrix et al. Nov 2002
US6900498 Advanced Technology Materials, Inc. Gregory T. Stauf et al. May 2005