Light emitting device with blue light LED and phosphor components
Filing Information
- Patent Number: US7531960
- Application Number: US11682014
- Filing date: 03/05/2007
- Issue date: 05/12/2009
- Prior Publication Data:
- US20070159060 - 07/12/2007
- Predicted expiration date: 03/19/2018
- Patent term adjustment: 233
- U.S. Classifications: 313/512 · 428/690 · 257/103 ·
- International Classifications: H05B3300 ·
- Related U.S. Application Data:
This application is a 37 C.F.R. § 1.53(b) divisional of U.S. application No. 10/609,402, filed Jul. 1, 2003, now U.S. Pat. No. 7,362,048 which is a divisional of U.S. application Ser. No. 09/458,024, filed Dec. 10, 1999, now U.S. Pat. No. 6,614,179 which is a divisional of U.S. application Ser. No. 09/300,315, filed on Apr. 28, 1999, now U.S. Pat. No. 6,069,440, which is a divisional of U.S. application Ser. No. 08/902,725, filed on Jul. 29, 1997, now U.S. Pat. No. 5,998,925, the entire contents of which are hereby incorporated by reference. - Foreign Priority: JPP08198585 - 07/29/1996 · JPP08244339 - 09/17/1996 · JPP08245381 - 09/18/1996 · JPP08359004 - 12/27/1996 · JPP09081010 - 03/31/1997 ·
Abstract
A light emitting device includes a light emitting component; and a phosphor capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light. A straight line connecting a point of chromaticity corresponding to a peak of the spectrum generated by the light emitting component and a point of chromaticity corresponding to a peak of the spectrum generated by the phosphor is disposed along with the black body radiation locus in the chromaticity diagram.References Cited
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Referenced By
The current document is not referenced by other documents.Patent Family
The current document is not in a family.Independent Claims | See all claims (23)
- 1. A light emitting device which comprises; a light emitting component having a gallium nitride based semiconductor; and a resin containing at least one phosphor capable of absorbing a part of a first light of blue color emitting from the light emitting component and emitting a second light of wavelength different from that of the absorbed first light, said emission of the second light emitted from at least one fluorescent material and a light of an unabsorbed first light passes through said fluorescent material from said light emitting component, said unabsorbed first light and said second light are capable of overlapping each other to make white light; wherein a concentration of the phosphor increases from the surface of a resin that contains the phosphor toward the light emitting component, or the concentration of phosphor increases from the light emitting component toward the resin surface.
- 5. A light emitting device comprising: a light emitting component having a gallium nitride based semiconductor; and a resin containing at least one phosphor capable of absorbing a part of a first light of blue color emitting from the light emitting component and emitting a second light of wavelength different from that of the absorbed first light, said emission of the second light emitted from two or more fluorescent material and a light of an unabsorbed first light passes through said fluorescent material from said light emitting component, said unabsorbed first light and said second light are capable of overlapping each other to make white light; wherein the two or more kinds of fluorescent materials are independently arranged wherein fluorescent material that absorbs light from the light emitting component of a shorter wavelength is near the light emitting component, and a fluorescent material that absorbs light of a longer wavelength is away from the light emitting component.
- 14. A light emitting device comprising: a light emitting component having a gallium nitride based semiconductor; and a resin containing at least one phosphor capable of absorbing a part of a first light of blue color emitting from the light emitting component and emitting a second light of wavelength different from that of the absorbed first light, said emission of the second light emitted from at least one fluorescent material and a light of an unabsorbed first light passes through said the fluorescent material from said light emitting component, said unabsorbed first light and said second light are capable of overlapping each other to make white light; wherein the spectrum of said gallium nitride based semiconductor is a peak wavelength within the range from 420 to 490 nm, the spectrum of said fluorescent material is a peak wavelength existing around the range from 510 nm to 600 nm, and said fluorescent material has a controlled particle size distribution.





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