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US7858816: Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films

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Filing Information

Inventor(s) Tianniu Chen · Chongying Xu · Jeffrey F. Roeder · Thomas H. Baum ·
Assignee(s) Advanced Technology Materials, Inc. ·
Attorney/Agent(s) Steven J. Hultquist · Intellectual Property/Technology Law · Maggie Chappuis ·
Primary Examiner Porfirio Nazario Gonzalez ·
Application Number US12790835
Filing date 05/30/2010
Issue date 12/28/2010
Prior Publication Data
Predicted expiration date 01/12/2028
U.S. Classifications 556/42  · 257/751  · 423/62  ·
International Classifications C07F900  ·
Kind CodeB2
Related U.S. Application DataCROSS-REFERENCE TO RELATED APPLICATION
This is a divisional under 35 USC 120 of U.S. patent application Ser. No. 12/013,433 filed Jan. 12, 2008 in the names of Tianniu Chen, et al. for “TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205,” now U.S. Pat. No. 7,750,173 issued Jul. 6, 2010, which in turn claims the benefit of priority under 35 USC 119 of U.S. Provisional Patent Application 60/885,459 filed Jan. 18, 2007 in the names of Tianniu Chen, et al. for “TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205.” The disclosures of said U.S. Pat. No. 7,750,173 and said U.S. Provisional Patent Application 60/885,459 are hereby incorporated herein by reference, in their respective entireties, for all purposes.
20 Claims, 5 Drawings


Abstract

Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

Independent Claims | See all claims (20)

  1. 1. A method for making a tantalum compound of Formula I: wherein: R1, R2, R3 and R4 can be the same as or different from one another, and each is independently selected from the group consisting of hydrogen, hydrocarbyl, alkyl, silyl, alkylamino, alkenyl, aryl and hydrazyl, with the provisos that R1=R2≠iso-propyl, and R1=R2≠cyclohexyl; wherein said R1, R2, R3 and R4 may be optionally further substituted with a N, S, O, or a halogen atom, said method comprising the step of: (a) reacting a compound of Formula II below: M(NR3R4)5  (Formula II),  with a compound of Formula III: R1N═C═NR2  (Formula III),  wherein M is tantalum and R1, R2, R3 and R4 are as indicated above.
  2. 16. A method of making [(ButNC(NMe2)NEt)Ta(NMe2)4], comprising reacting ButN═C═Net and Ta(NMe2)5 in a reaction medium comprising solvent, and recovering said [(ButNC(NMe2)NEt)Ta(NMe2)4] under vacuum from said reaction medium.

References Cited

U.S. Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
US2839421 DU PONT Albisetti Jun 1958
US3076834 DOW CHEMICAL CO Norton Feb 1963
US3288829 ETHYL CORP Wilinson Nov 1966
US3356527 MOSHIER ROSS W Moshier et al. Dec 1967
US3437516 US AIR FORCE Tamborski Apr 1969
US3467686 UNION CARBIDE CORP Creamer Sep 1969
US3594216 WESTINGHOUSE ELECTRIC CORP Charles et al. Jul 1971
US3988332 E. I. Du Pont de Nemours and Company Schrock Oct 1976
US4147556 PPG Industries, Inc. Donley Apr 1979
US4281037 DAP, Inc. Choung Jul 1981
US4383119 Chemplex Company Pullukat et al. May 1983
US4401474 PPG Industries, Inc. Donley Aug 1983
US4491669 Petrarch Systems Inc. Arkles et al. Jan 1985
US4499198 Chemplex Company Pullukat et al. Feb 1985
US4510222 Ltd. Hitachi Okunaka et al. Apr 1985
US4529427 AT&T Bell Laboratories French Jul 1985
US4726938 Rhone-Poulenc Specialites Chimiques Rollat et al. Feb 1988
US4895709 SRI International Laine Jan 1990
US4898842 International Business Machines Corporation David Feb 1990
US4908065 Tokyo Ohka Kogyo Co., Ltd. Tanitsu et al. Mar 1990
US5003092 The Research Foundation of State University of NY Beachley, Jr. Mar 1991
US5008422 SRI International Blum et al. Apr 1991
US5034372 Mitsubishi Denki Kabushiki Kaisha Matsuno et al. Jul 1991
US5043049 Seiko Epson Corporation Takenaka Aug 1991
US5084588 Union Carbide Chemicals & Plastics Technology Corporation Ocheltree et al. Jan 1992
US5085731 Air Products and Chemicals, Inc. Norman et al. Feb 1992
US5094701 Air Products and Chemicals, Inc. Norma et al. Mar 1992
US5096737 International Business Machines Corporation Baum et al. Mar 1992
US5098516 Air Products and Chemicals, Inc. Norman et al. Mar 1992
US5110622 Matsushita Electric Industrial Co., Ltd. Hasegawa et al. May 1992
US5120703 Alfred University Snyder et al. Jun 1992
US5130172 The Regents of the University of California Hicks et al. Jul 1992
US5139825 President and Fellows of Harvard College Gordon et al. Aug 1992
US5144049 Air Products and Chemicals, Inc. Norman et al. Sep 1992
US5165960 Ford Motor Company Platts Nov 1992
US5178911 The President and Fellows of Harvard College Gordon et al. Jan 1993
US5187300 Air Products and Chemicals, Inc. Norman Feb 1993
US5189503 Kabushiki Kaisha Toshiba Suguro et al. Feb 1993
US5204314 Advanced Technology Materials, Inc. Kirlin et al. Apr 1993
US5210254 Union Carbide Chemicals & Plastics Technology Corporation Ritscher et al. May 1993
US5216572 Ramtron International Corporation Larson et al. Jun 1993
US5220044 International Business Machines Corporation Baum et al. Jun 1993
US5225561 Advanced Technology Materials, Inc. Kirlin et al. Jul 1993
US5252518 Micron Technology, Inc. Sandhu et al. Oct 1993
US5268496 Wacker-Chemie GmbH Geisberger Dec 1993
US5280012 Advanced Technology Materials Inc. Kirlin et al. Jan 1994
US5322712 Air Products and Chemicals, Inc. Norman et al. Jun 1994
US5362328 Advanced Technology Materials, Inc. Gardiner et al. Nov 1994
US5374578 Ramtron International Corporation Patel et al. Dec 1994
US5376409 The Research Foundation of State University of New York Kaloyeros et al. Dec 1994
US5412129 DiCarolis May 1995
US5417823 Ford Motor Company Narula et al. May 1995
US5424095 Eniricerche S.p.A. Clark et al. Jun 1995
US5440173 Radiant Technologies Evans, Jr. et al. Aug 1995
US5453494 Advanced Technology Materials, Inc. Kirlin et al. Sep 1995
US5536323 Advanced Technology Materials, Inc. Kirlin et al. Jul 1996
US5561307 Symetrix Corporation Mihara et al. Oct 1996
US5579258 Olympus Optical Co., Ltd. Adachi Nov 1996
US5583205 Florida State University Rees, Jr. Dec 1996
US5591483 Wayne State University Winter et al. Jan 1997
US5593741 NEC Corporation Ikeda Jan 1997
US5616755 Huels Aktiengesellschaft Seiler et al. Apr 1997
US5668054 United Microelectronics Corporation Sun et al. Sep 1997
US5677002 Advanced Technology Materials Kirlin et al. Oct 1997
US5679815 Advanced Technology Materials, Inc. Kirlin et al. Oct 1997
US5684302 Siemens Aktiengesellschaft Wersing et al. Nov 1997
US5688054 Rabe Nov 1997
US5705443 Advanced Technology Materials, Inc. Stauf et al. Jan 1998
US5711816 Advanced Technolgy Materials, Inc. Kirlin et al. Jan 1998
US5719417 Advanced Technology Materials, Inc. Roeder et al. Feb 1998
US5726294 Florida State University Rees, Jr. Mar 1998
US5736422 Dong Yang Cement Corporation Lee et al. Apr 1998
US5744192 Sharp Microelectronics Technology, Inc. Nguyen et al. Apr 1998
US5751540 Samsung Electronics Co., Ltd. Lee et al. May 1998
US5767301 Sharp Microelectronics Technology, Inc. Senzaki et al. Jun 1998
US5783716 Advanced Technology Materials, Inc. Baum et al. Jul 1998
US5807774 Sharp Kabushiki Kaisha Desu et al. Sep 1998
US5817367 LG Semicon., Ltd. Chun et al. Oct 1998
US5820664 Advanced Technology Materials, Inc. Gardiner et al. Oct 1998
US5820678 The Regents of the University of California Hubert et al. Oct 1998
US5840897 Advanced Technology Materials, Inc. Kirlin et al. Nov 1998
US5852307 Kabushiki Kaisha Toshiba Aoyama et al. Dec 1998
US5859274 Advanced Technology Materials, Inc. Baum et al. Jan 1999
US5876503 Advanced Technology Materials, Inc. Roeder et al. Mar 1999
US5892254 Samsung Electronics Co., Ltd. Park et al. Apr 1999
US5902639 Advanced Technology Materials, Inc Glassman et al. May 1999
US5916359 Advanced Technology Materials, Inc. Baum et al. Jun 1999
US5919522 Advanced Technology Materials, Inc. Baum et al. Jul 1999
US5923970 Advanced Technology Materials, Inc. Kirlin Jul 1999
US5924012 Micron Technology, Inc. Vaartstra Jul 1999
US5932363 Xerox Corporation Hu et al. Aug 1999
US5952046 Advanced Technology Materials, Inc. Chayka Sep 1999
US5955774 Samsung Electronics Co., Ltd. Kang Sep 1999
US5962884 Sharp Laboratories of America, Inc. Hsu et al. Oct 1999
US5972430 Advanced Technology Materials, Inc. DiMeo, Jr. et al. Oct 1999
US5973911 Texas Instruments Incorporated Nishioka Oct 1999
US5976991 Air Products and Chemicals, Inc. Laxman et al. Nov 1999
US5994571 Sharp Laboratories of America, Inc. Zhuang et al. Nov 1999
US6002150 Advanced Micro Devices, Inc. Gardner et al. Dec 1999
US6005274 Advanced Micro Devices, Inc. Gardner et al. Dec 1999
US6013553 Texas Instruments Incorporated Wallace et al. Jan 2000
US6015917 Advanced Technology Materials, Inc. Bhandari et al. Jan 2000
US6020243 Texas Instruments Incorporated Wallace et al. Feb 2000
US6020643 Kabushiki Kaisha Toshiba Fukuzumi et al. Feb 2000
US6060406 Lucent Technologies Inc. Alers et al. May 2000
US6072207 Symetrix Corporation Yoshimori et al. Jun 2000
US6072689 Advanced Technology Materials, Inc. Kirlin Jun 2000
US6077356 Advanced Technology Materials, Inc. Bouchard Jun 2000
US6086779 McGean-Rohco, Inc. Bishop et al. Jul 2000
US6099653 Advanced Technology Materials, Inc. Bhandari et al. Aug 2000
US6099903 Research Foundation of State University of New York Kaloyeros et al. Aug 2000
US6102993 Advanced Technology Materials, Inc. Bhandari et al. Aug 2000
US6110529 Gardiner et al. Aug 2000
US6111124 Advanced Technology Materials, Inc. Baum et al. Aug 2000
US6121647 TDK Corporation Yano et al. Sep 2000
US6126996 Advanced Technology Materials, Inc. Kirlin et al. Oct 2000
US6153519 Motorola, Inc. Jain et al. Nov 2000
US6159855 Micron Technology, Inc. Vaartstra Dec 2000
US6162712 Advanced Technology Materials, Inc. Baum et al. Dec 2000
US6165802 Symetrix Corporation Cuchiaro et al. Dec 2000
US6177135 Advanced Technology Materials, Inc. Hintermaier et al. Jan 2001
US6184550 Advanced Technology Materials, Inc. Van Buskirk et al. Feb 2001
US6191443 Micron Technology, Inc. Al-Shareef et al. Feb 2001
US6204525 Murata Manufacturing Co., Ltd. Sakurai et al. Mar 2001
US6214105 Advanced Technology Materials, Inc. Hintermaier Apr 2001
US6229168 Rohm Co., Ltd. Nakamura May 2001
US6245151 Advanced Technology Materials, Inc. Bhandari et al. Jun 2001
US6269979 Dumont Aug 2001
US6284652 Advanced Technology Materials, Inc. Charneski et al. Sep 2001
US6300212 NEC Corporation Inoue et al. Oct 2001
US6303391 Advanced Technology Materials, Inc. Hintermaier et al. Oct 2001
US6309894 Hitachi, Ltd Miki et al. Oct 2001
US6337148 Advanced Technology Materials, Inc. Xu et al. Jan 2002
US6340386 Advanced Technology Materials, Inc. Hendrix et al. Jan 2002
US6342711 Advanced Technology Materials, Inc. Van Buskirk et al. Jan 2002
US6346741 Advanced Technology Materials, Inc. Van Buskirk et al. Feb 2002
US6348412 Micron Technology, Inc. Vaartstra Feb 2002
US6348705 Advanced Technology Materials, Inc. Hendrix Feb 2002
US6355562 Advanced Technology Materials, Inc. Charneski et al. Mar 2002
US6379748 Advanced Technology Materials, Inc. Bhandari et al. Apr 2002
US6399208 Advanced Technology Materials Inc. Baum et al. Jun 2002
US6417369 Advanced Technology Materials, Inc. Xu et al. Jul 2002
US6440202 Advanced Technology Materials, Inc. Xu et al. Aug 2002
US6444264 Advanced Technology Materials, Inc. Hintermaier Sep 2002
US6500489 Advanced Technology Materials, Inc. Hintermaier et al. Dec 2002
US6511706 Advanced Technology Materials, Inc. Hendrix et al. Jan 2003
US6511856 Advanced Technology Materials, Inc. Van Buskirk et al. Jan 2003
US6541375 Matsushita Electric Industrial Co., Ltd. Hayashi et al. Apr 2003
US6552209 Air Products and Chemicals, Inc. Lei et al. Apr 2003
US6593484 Kabushikikaisha Kojundokagaku Kenkyusho Yasuhara et al. Jul 2003
US6639080 Advanced Technology Materials, Inc. Xu et al. Oct 2003
US6645860 Advanced Technology Materials, Inc. Charneski et al. Nov 2003
US6660331 Advanced Technology Materials, Inc. Hendrix et al. Dec 2003
US6713797 Advanced Technology Materials, Inc. Desrochers et al. Mar 2004
US6730523 Advanced Technology Materials, Inc. Hintermaier et al. May 2004
US6736993 Advanced Technology Materials, Inc. Xu et al. May 2004
US6787186 Advanced Technology Materials, Inc. Hintermaier Sep 2004
US6794703 Micron Technology, Inc. Thakur et al. Sep 2004
US6869638 Advanced Tehnology Materials, Inc. Baum et al. Mar 2005
US6879876 Advanced Technology Materials, Inc. O'Dougherty et al. Apr 2005
US6900498 Advanced Technology Materials, Inc. Stauf et al. May 2005
US6951804 Applied Materials, Inc. Seutter et al. Oct 2005
US6960675 Advanced Technology Materials, Inc. Chen et al. Nov 2005
US6989457 Advanced Technology Materials, Inc. Kamepalli et al. Jan 2006
US7005303 Advanced Technology Materials, Inc. Hintermaier et al. Feb 2006
US7005392 Advanced Technology Materials, Inc. Baum et al. Feb 2006
US7012292 Advanced Technology Materials, Inc Van Buskirk et al. Mar 2006
US7084080 Advanced Technology Materials, Inc. Borovik et al. Aug 2006
US7166732 Advanced Technology Materials, Inc. Xu et al. Jan 2007
US7198815 Advanced Technology Materials, Inc. Chen et al. Apr 2007
US7208427 Advanced Technology Materials, Inc. Roeder et al. Apr 2007
US7241912 Advanced Technology Materials, Inc. Xu et al. Jul 2007
US7285308 Advanced Technology Materials, Inc. Hendrix et al. Oct 2007
US7323581 Advanced Technology Materials, Inc. Gardiner et al. Jan 2008
US7329768 Advanced Technology Materials, Inc. Kamepalli et al. Feb 2008
US7702418 Advanced Technology Materials, Inc. O'Dougherty et al. Apr 2010
US20020192952 Applied Materials, Inc. Itoh et al. Dec 2002
US20020197402 Chiang et al. Dec 2002
US20030004608 O'Dougherty et al. Jan 2003
US20040215030 Norman Oct 2004
US20050042372 Denk et al. Feb 2005
US20050224523 Advanced Technology Materials, Inc. O'Dougherty et al. Oct 2005
US20060035462 MICRON TECHNOLOGY, INC. Millward Feb 2006
US20060099831 BOROVIK ALEXANDER S Borovik et al. May 2006
US20060102895 HENDRIX BRYAN C Hendrix et al. May 2006
US20060108623 BUSKIRK PETER C V Van Buskirk et al. May 2006
US20060148271 BOROVIK ALEXANDER S Borovik et al. Jul 2006
US20060292303 MICRON TECHNOLOGY, INC. Millward et al. Dec 2006
US20070116876 XU CHONGYING Xu et al. May 2007
US20070117385 CHEN TIANNIU Chen et al. May 2007
US20080138984 PRAXAIR TECHNOLOGY, INC. Zhang et al. Jun 2008
US20090004858 ADVANCED TECHNOLOGY MATERIALS, INC. Chen et al. Jan 2009
US20090032952 ADVANCED TECHNOLOGY MATERIALS, INC. Chen et al. Feb 2009
US20090087561 Advanced Technology Materials, Inc. Chen et al. Apr 2009

Foreign Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
DE3447635HITACHI LTDJul 1985
DE4039449BAYER AGJun 1992
DE4039449BAYER AGJun 1992
EP0852229SHARP KABUSHIKI KAISHAJul 1998
EP1142894AIR PRODUCTS AND CHEMICALS, INC.Oct 2001
GB976573UNION CARBIDE CORPNov 1964
JP06080413MARUYAMA TOSHIROMar 1994
JP06169969MATSUSHITA ELECTRIC IND CO LTDJun 1994
JP06293778IDEMITSU KOSAN CO LTDOct 1994
JPH07263431Oct 1995
JP08074055MITSUBISHI MATERIALS CORPMar 1996
JP08176224SUMITOMO CHEM CO LTDJul 1996
JP8176224Jul 1996
JP2001044420NEC CORPFeb 2001
KR102001008502Feb 2001
WO199801904Jan 1998
WO200067300PRESIDENT AND FELLOWS OF HARVARD COLLEGENov 2000
WO2003050323APPLIED MATERIALS, INC.Jun 2003
WO2004046417PRESIDENT AND FELLOWS OF HARVARD COLLEGEJun 2004

Other Publications

Ainger, F.W., et al., “Deposition of ferroelectric oxides by MOCVD”, “Prog. Crystal Growth and Charact.”, 1991, pp. 183-197, vol. 22.
Anderson, Herbert H., “Dialkylaminogermanes and Dialkylaminosilanes”, “J. Amer. Chem. Soc.”, Mar. 20, 1952, pp. 1421-1423, vol. 74, No. 6.
Antinolo, A. et al. , “Bonding Interactions Between Three Adjacent Hydrogen Ligands. Preparation and Spectroscopic Properties of the Tantalum..”, 1988, pp. 1210-1212, vol. 17.
Antinolo, A. et al. , “Exchange Coupling in Niobocene Trihydrides, Nb(C5H3RR′)2H3, and Their Adducts with Copper Triad Cations . . . ”, “Inorganic Chemistry”, 1996, pp. 7873-7881, vol. 35, No. 26.
Awaya, Nobuyoshi, et al., “Deposition mechanism of copper CVD”, “Conference Proceedings ULSI-VH”, 1992, pp. 345-354, Publisher: Materials Research Society.
Banaszak Holl, Mark M., et al., “Ammonolysis of tantalum alkyls: Formation of cubic TaN and trimeric nitride, [CpMeTan]3”, “Inorganic Chemistry”, Apr. 18, 1990, pp. 1518-1526, vol. 29, No. 8.
Banaszak Holl, Mark M., et al., “The ladder structure of ((tert-BuCH2)2TaN)5cnt dot NH3 cnt dot 2C7H8 and its relationship to cubic tantalum nitride”, “J. Amer. Chem. Soc.”, Oct. 24, 1990, pp. 7989-7994, vol. 112, No. 22.
Banaszak Holl, Mark M., et al., “Conversion of [(tBuCH2)2TaN]5 to Cubic TaN: Related Syntheses, EHMO Calculations, and MAS and Spin Echo 15N NMR Spectros”, “Chem. Mater.”, Oct. 1996, pp. 2468-2480, vol. 8, No. 10.
Barker, James, et al., “The coordination chemistry of the amidine ligand”, “Coord. Chem. Rev.”, Jul. 1994, pp. 219-300, vol. 133.
Baxter, David V., et al., “Molecular Routes to Metal Carbides, Nitrides, and Oxides. 2. Studies of the Ammonolysis of Metal Dialkylamides and Hexam”, “Chem. Mater.”, Jun. 1996, pp. 1222-1228, vol. 8, No. 6.
Bilodeau, S. et al., “Process and Thin Film Characteristics of TaN Deposited by MOCVD”, “Proceedings of the Int. Conf. on Solid State Devices and Materials”, 2001, pp. 609-612, Publisher: Materials Research Society.
Blanquet, E., et al., “Evaluation of LPCVD Me-Si-N (Me=Ta, Ti, W, Re) diffusion barriers for Cu metallizations”, “Microelectronic Engineering”, Nov. 1997, pp. 189-195, vol. 37/38.
Bogert, L. Jean, “Chapter XVII, General classification of organic compounds”, “Fundamentals of Chemistry”, 1924, pp. 184-187, Publisher: WB Saunders, Published in: Philadelphia.
Bohr, Mark T., “Scaling of high performance interconnects”, “Conference Proceedings ULSI XII”, 1997, pp. 3-10, Publisher: Materials Research Society.
Boni, G. et al. , “Tantalocene-hydride-phosphorus chemistry. Some new complexes and crystal structures . . . ”, “Polyhedron”, 2002, pp. 371-379, vol. 21, No. 4.
Bradley, Donald C., et al., “Metallo-organic compounds containing metal-nitrogen bonds: Part I, some dialkyamino derivatives of titanium and . . . ”, “J. Chem. Soc.”, Oct. 1960, pp. 3857-3861.
Bradley, Donald C., et al., “Metallo-organic compounds containing metal-nitrogen bonds: Part III, Dialkylamino compounds of tantalum”, “Canadian J. Chem.”, Jul. 12, 1962, pp. 1355-1360, vol. 40, No. 7.
Bradley, D.C., et al., “Nuclear magnetic resonance studies on niobium and tantalum penta-alkoxides”, “J. Chem. Soc. (A)”, 1968, pp. 219-223.
Bradley, Donald C., et al., “Transition-metal dialkylamides and disilylamides”, “Accounts of Chemical Research”, 1976, pp. 273-280, vol. 9.
Buerger, Hans, et al., “Titanium-nitrogen compounds 9 Tris(dialkylamino)titanium derivatives of phosphorus and arsenic”, “CA: 72:132915, abstract of Inorganic and Nuclear Chemistry Letters”, 1970, pp. 299-304, vol. 6, No. 3.
Carmalt, CJ, et al., “Synthesis of titanium(IV) guanidinate complexes and the formation of titanium carbonitride via low-pressure chemical vap”, “Inorganic Chemistry”, Feb. 7, 2005, pp. 615-619, vol. 44, No. 3.
Castro, A. et al. , “Mixed-dicyclopentadienyl niobium and tantalum complexes: synthesis and reactivity. X-ray molecular structures . . . ”, “Journal of Organometallic Chemistry”, 1996, pp. 37-46, vol. 518, No. 1-2.
Catania, Phillip, et al., “Low resistivity body-centered cubic tantalum thini films as diffusion barriers between copper and silicon”, “J. Vac. Sci. Tech. A”, 1992, pp. 3318-3321, vol. A10.
Chao, Yuan-Wei, et al., “Preparation and properties of tantalum imido complexes and their reactions with alkynes. Coordination control through . . . ”, “Inorganic Chemistry”, Oct. 4, 1989, pp. 3860-3868, vol. 28, No. 20.
Chao, Yuan-Wei, et al., “Preparation and properties of amido halide complexes of niobium and tantalum and their reactions with alkynes ”, “Polyhedron”, 1990, pp. 2709-2716, vol. 9, No. 22.
Chen, C. et al., “Synthesis and catalytic properties of oxalic amidinato complexes”, “J. Chem. Society, Dalton Trans.”, May 15, 2001, pp. 1761-1767, Publisher: The Royal Scociety of Chemistry.
Cheon, Jinwoo, et al., “Gas Phase Photoproduction of Diatomic Metal Nitrides During Metal Nitride Laser Chemical Vapor Deposition”, “Inorg. Chem.”, May 3, 1999, pp. 2238-2239, vol. 38, No. 9.
Chi, K. M., et al., “Synthesis and characterization of (beta-diketonato)copper(I)alkyne complexes: structural characterization of . . . ”, “Inorganic Chemistry”, Nov. 13, 1991, pp. 4293-4294, vol. 30, No. 23, Publisher: American Chemical Society.
Chisholm, Malcom H., et al., “Chloro(dimethylamido) compounds of tantalum(V): Preparation, properties, and structures of [Ta(NMe2)3CI2]2, . . . ”, “Inorganic Chemistry”, Jun. 1, 1981, pp. 1859-1865, vol. 20, No. 6.
Chiu, Hsin-Tien, et al., “Effect of hydrogen on deposition of tantalum nitride thin films from ethylimidotantalum complex”, “J. of Mater. Sci. Lett.”, Jan. 1992, pp. 570-572, vol. 11, No. 9.
Chiu, Hsin-Tien, et al., “Deposition of tantalum nitride thin films from ethylimidotantalum complex”, “J. Mater. Sci. Lett.”, Jan. 1992, pp. 96-98, vol. 11, No. 2.
Chiu, Hsin-Tien,et al., “Tungsten nitride thin films prepared by MOCVD”, “J. Mater. Res.”, Jun. 1993, pp. 1353-1360, vol. 8, No. 6.
Cotton, F. A., et al., “Experimental and theoretical studies of the copper(I) and silver(I) dinuclear N,N-di-p-tolylformamidinato complexes”, “J. Am. Chem. Soc.”, 1988, pp. 7077-7083, vol. 110, No. 21.
Cummins, Christopher C., et al., “Synthesis of Terminal Vanadium(V) Imido, Oxo, Sulfido, Selenido, and Tellurido Complexes by Imido Group or Chalcogenide”, “Inorganic Chemistry”, Mar. 30, 1994, pp. 1448-1457, vol. 33, No. 7.
Deutschler, R.L., et al., “Eight coordinate tetrakis-chelate complexes of niobium(IV) and tantalum(IV)”, “Inorganica Chimica Acta”, 1970, pp. 645-650, vol. 4, No. 4.
Dias, H.V. Rasika, et al., “Coinage metal complexes of 3,5-bis(trifluoromethyl)pyrazolate ligand Synthesis and characterization . . . ”, “J. Fluor. Chem.”, Apr. 24, 2000, pp. 163-169, vol. 103, No. 2.
Edelmann, Frank T., “N-silyated benzamidines—versatile building blocks in main group and coordination chemistry”, “Coord. Chem. Rev.”, Dec. 1994, pp. 403-481, vol. 137.
Engbrecht, E. et al., “Chemical vapor deposition growth and properties of TaCxNy”, “Thin Solid Films”, 2002, pp. 145-150, vol. 418.
Fan, M. et al. , “Peculiar Hydride-Silyl Interactions in Group 5 Bent Metallocene Complexes, Studied by ab Initio Calculations”, “Organometallics”, 1998, pp. 1092-1100, vol. 17, No. 6.
Fix, Renaud, et al., “Chemical vapor deposition of vanadium, niobium, and tantalum nitride thin films”, “Chem. Mater,”, May 1993, pp. 614-619, vol. 5, No. 5.
Foust, D. et al. , “Photodegradation studies on di-n5-cyclopenta-dienyldimethyl-tantalum and some deuterated analogs ”, “Journal of Organometallic Chemistry”, 1982, pp. 47-55, vol. 226, No. 1.
Fuggle, J.C., et al., “Reactions of Niobium and Tantalum Pentafluorides with Trimethylsilyldiethylamine and with Trimethylsilyl Chloride”, “J. Chem. Soc. Dalton Trans.”, 1972, pp. 1766-1768.
Gade, L. et al. , “New transition metal imido chemistry with diamido-donor ligands”, “Coordination Chemistry Reviews”, 2001, pp. 65-97, vol. 216-217.
Gilles, S., et al., “Deposition of (Ti,Al)N thin films by organometallic chemical vapor deposition: thermodynamic predictions and . . . ”, “Surface and Coatings Technol.”, Oct. 1997, pp. 285-290, vol. 94-95.
Gilman, Norman W., et al., “Extension of the Smiles rearrangement. Displacement of an aromatic amide group by an amine nitrogen”, “J. Org. Chem.”, Jan. 26, 1973, pp. 373-377, vol. 38, No. 2.
Girolami, Gregory S., et al., “Chemical vapor deposition of copper and copper oxide thin films for copper(I) tert-butoxide”, “Chemistry of Materials”, 1989, pp. 8-10, vol. 1.
Gordon, Roy G., et al., “Silicon dimethylamido complexes and ammonia as precursors for the atmospheric pressure chemical vapor deposition of . . . ”, “Chem. Mater.”, Sep. 1990, pp. 480-482, vol. 2, No. 5.
Hieber, K., “Structural and electrical properties of Ta and Ta nitrides deposited by chemical vapour deposition”, “Thin Solid Films”, Nov. 1974, pp. 157-164, vol. 24, No. 1.
Hiskes, R., et al., “Single source metalorganic chemical vapor deposition of low microwave surface resistance YBa2Cu3O7”, “Applied Physics Letters”, Jul. 29, 1991, pp. 606-607, vol. 59, No. 5.
Holloway, Karen, et al., “Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions”, “Journal of Applied Physics”, Jun. 1, 1992, pp. 5433-5444, vol. 71, No. 11.
Houle, F. A., et al., “Laser chemical vapor deposition of copper”, “Appl. Phys. Lett.”, 1985, pp. 204-206, vol. 46.
Im, S. et al., “A Study on CVD TaN as a Diffusion Barrier for Cu Interconnects”, “Mat. Res. Symp. Proc.”, 2000, pp. D671-D676, vol. 612, Publisher: Materials Research Society.
Jacini, Giovanni, “Organic derivatives of titanium”, “CA: 49:19704, abstract of Olii Minerali, Grassi e Saponi, Colori e Vernici”, 1953, pp. 193-194, vol. 30.
Jain, A., et al., “Chemical vapor deposition of copper via disproportionation of hexafluoroacetylacetonato(1,5-cyclooctadiene)copper(I) . . . ”, “Journal of Materials Research”, Feb. 1992, pp. 261-264, vol. 7, No. 2, Publisher: Materials Research Society.
Jiang, Qian, et al., “Synthesis of mono- and bis(silyl) complexes of tantalum”, “Organometallics”, Oct. 1991, pp. 3648-3655, vol. 10, No. 10.
Jiang, Q. et al. , “Thermochemical Aspects of Arene C-H Activation by Tantalum Silyl Complexes: Relative Ta-Si and Ta-C bond enthalpies”, “Journal of Organometallic Chemistry”, Sep. 1994, pp. 3679-3691, vol. 13, No. 9.
Jones, Anthony C., et al., “MOCVD of zirconia thin films by direct liquid injection using a new class of zirconium precurser”, “Chemical Vapor Deposition”, Dec. 1998, pp. 46-49, vol. 4, No. 2.
Juza, R., et al., “Ammonothermal synthesis of magnesium and berylium amides”, “Angew. Chem. Interntl. Ed.”, 1966, p. 247 vol. 5, No. 2.
Kaloyeros, Alain E., et al., “Low-temperature metal-organic chemical vapor deposition (LTMOCVD) of device-quality copper films for microelectronic . . . ”, “Journal of Electronic Materials”, Mar. 1990, pp. 271-276, vol. 19, No. 3, Publisher: The Minerals, Metals & Materials Society and the Institute of Electrical and Electronics Engineers.
Kannengiesser, Gerard, et al., “Preparation de quelqes tetra(dialcoylamino)silanes”, “Bull. Soc. Chim. Fr.”, Jul. 1967, pp. 2492-2495, vol. 322, No. 7.
Kapoor, P.N., et al., “Organic compounds of niobium and tantalum IV. Reactions of niobium and tantalum pentaethoxides with Beta-diketones”, “Journal of the Less-Common Metals”, May 1965, pp. 339-346, vol. 8, No. 5.
Kee, Terence P., “Tantalum”, “Coordination Chemistry Reivews”, Jan. 1995, pp. 181-194, vol. 138.
Kilner, Melvyn, et al., “Studies of Amidino-Complexes of Copper(I) and (II). Carboxylate Analogues”, “Polyhedron”, 1983, pp. 1379-1388, vol. 2, No. 12, Publisher: Pergamon Press Ltd., Published in: Great Britain.
Kim, H. et al., “Diffusion Barrier Properties of Transition Metal Thin Fims Grown by Plasma-Enhanced Atomic-Layer Deposition”, “J. Vac. Sci. Technology”, Jul. 2002, pp. 1321-1327, vol. 20, No. 4.
Kim, H. et al., “Growth of Cubic TaN Thin Films by Plasma-Enhanced Atmic Layer Deposition”, “J. Applied Physics”, Dec. 15, 2002, pp. 7080-7086, vol. 92, No. 12.
Kolawa, E., et al., “Tantalum-based diffusion barriers in Si/Cu VLSI metallizations”, “Journal of Applied Physics”, Aug. 1, 1991, pp. 1369-1373, vol. 70, No. 3.
Lappert, M.F., et al., “Metal and Metalloid Amides”, pp. 470-543, Publisher: John Wiley and Sons, (A Diligent Effort was Made to Locate This Reference, Including Contacting the British Library, Without Success. This Reference Was Cited in U.S. Patent No. 6,015,917, and the Examiner is Directed to the File History to Obtain same).
Leblanc, J. et al. , “Coordination Chemistry.—Substituted Biscyclopentadienyl Tantale Complexes: Synthesis and Reactivity of Dicholorides . . . ”, 1982, pp. 755-757, vol. 295, No. 8.
Li, Jian, et al., “Copper-based metallization in ULSI structures”, “MRS Bulletin”, Aug. 1994, pp. 15-18, vol. XIX, No. 8.
Li, Wentao, et al., “Additives for stabilizing LiPF6-based electrolyes against thermal decomposition”, “J. Electrochem. Soc.”, 2005, pp. A1361-A1365, vol. 152, No. 7.
Lim, Booyong S., et al., “Synthesis and Characterization of Volatile, Thermally Stable, Reactive Transition Metal Amidinates”, “Inorg. Chem.”, Dec. 1, 2003, pp. 7951-7958, vol. 42, No. 24.
Lim, Booyong S., et al., “Atomic layer deposition of transition metals”, “Nature Materials”, Nov. 2003, pp. 749-754, vol. 2, No. 11.
Lim, S. et al. , “A Study on the Development of Chemical Vapor Deposition Precursors. 4. Syntheses and Characterization of New N-Alkoxoy..”, “Chem. Mater.”, 2002, pp. 1548-1554, vol. 14, Publisher: American Chemical Society.
Linde, Von G., et al., “IR-spektren von amiden und imiden zwei- und dreiwertiger metalle”, “Z. anorg. allg. Chem.”, 1974, pp. 199-214, vol. 409.
Maruyama, Toshiro, et al., “Silicon dioxide thin films prepared by chemical vapor deposition from tetrakis (diethylamino)silane and ozone”, “Appl. Phys. Letters”, May 23, 1994, pp. 2800-2802, vol. 64, No. 21.
Maruyama, Toshiro, “Electrical Characterization of Silicon Dioxide Thin Films Prepared by Chemical Vapor Deposition from . . . ”, “Jpn. J. Appl. Phys.”, Jul. 15, 1997, pp. L922-L925, vol. 36, No. 7B.
McLain, S.J., et al., “Multiple metal-carbon bonds. 6. The reaction of niobium and tantalum neopentylidene complexes with simple olefins: . . . ”, “J. Amer. Chem. Soc.”, May 11, 1977, pp. 3519-3520, vol. 99, No. 10.
Murarka, S.P., et al., “Advanced multilayer metallization schemes with copper as interconnection metal”, “Thin Solid Films”, Dec. 15, 1993, pp. 257-266, vol. 236, No. 1-2.
Narula, A.K., et al., “Preparation and characterization of nobium (V) beta-diketonates”, “Synth. React. Inorg. Met. Org. Chem.”, 1983, pp. 1-19, vol. 13, No. 1.
Narula, A.K., et al., “Preparation and Characterization of Tantalum(V) beta-Diketonates (Part II)”, “Synth. React. Inorg. Met.-Org. Chem.”, 1983, pp. 887-898, vol. 13, No. 7.
“Adherent and stable metallization of CVD diamond”, “Nasa Tech Briefs”, Jun. 1997, pp. 63-64.
“Diffusion barriers for GaAs and InP devices”, “Nasa Tech Briefs”, Jun. 1997, p. 42.
Norman, J. A. T., et al., “New OMCVD precursors for selective copper metallization”, “Journal de Physique IV, Colloque C2, Suppl. Au Journal de Physique II”, Sep. 1991, pp. 271-278, vol. 1.
Nugent, William A., et al., “Structure and reactivity in the group b t-butylimido complexes (Me2N)3—NBut; X-ray crystal and molecular structure of..”, “JCS Chem. Comm.”, 1978, pp. 579-580.
Nugent, William A., “Synthesis of some d0 organoimido complexes of the early transition metals”, “Inorg. Chem.”, Mar. 16, 1983, pp. 965-969, vol. 22, No. 6.
Oakley, Sarah H., et al., “Structural consequences of the prohibition of hydrogen bonding in copper-guanidine systems”, “Inorg. Chem.”, 2004, pp. 5168-5172, vol. 43, No. 16.
Oehr, C., et al., “Thin copper films by plasma CVD using copper-hexafluoro-acetylacetonate”, “Applied Physics A: Solids and Surfaces”, Feb. 1988, pp. 151-154, vol. 45, No. 2.
Olowolafe, J.O., et al., “Interdiffusions in Cu/reactive-ion-sputtered TiN, Cu/chemical-vapor-deposited TiN, Cu/TaN, and TaN/Cu/TaN thin-film . . . ”, “Journal of Applied Physics”, Nov. 1, 1992, pp. 4099-4103, vol. 72, No. 9.
Ohshita, Yoshio, et al., “HfO2 growth by low-pressure chemical vapor deposition using the Hf(N(C2H5)2)4/O2 gas system”, “J. Cryst. Growth”, Nov. 2001, pp. 292-297, vol. 233, No. 1-2.
Ovchinnikov, Yu. E., et al., “The crystal structures of the titanium-containing organosilicon compounds (SiMe3)3 and (SiMe3)3GeTi(Nme2)3”, “Metalloorg. Khim, (Organometallic Chem. In USSR)”, 1992, pp. 564-567, vol. 5, No. 5.
Ovchinnikov, Yu E., et al., “Crystal and molecular structure of organosilicon derivatives of titanium (IV) (Me3Si)3SiTi(NEt2)3, and ClTi[N(SiMe3)2]3”, “CA: 125:100729, abstract of Izvestiya Akademii Nauk, Seriya Khimicheskaya”, 1993, pp. 1473-1476, vol. 8.
Papadopoulos, E.P., “Reaction of o-amononitriles with isocyanates. 2. A facile synthesis of imidazo[1,2-c]quinazoline-2,5-(3H,6H)dione”, “J. Heterocyclic Chem.”, May 1981, pp. 515-518, vol. 18.
Park, J. et al., “Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent”, “Electrochemical and Solid State Letters”, Mar. 9, 2001, pp. C17-C19, vol. 4, No. 4.
Park, J. et al., “Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films”, “Journal of the Electrochemical Society”, Nov. 27, 2001, pp. C28-C32, vol. 1.
Parkin, G. et al. , “Alpha- and beta-migratory insertion and elimination processes for alkyl complexes of permethylscandocene and permethylta”, “Journal of Molecular Catalysis”, 1987, pp. 21-39, vol. 41, No. 1-2.
Phule, Pradeep P., “Sol-gel sythesis of ferroelectric lithium tantalate ceramics: FTIR investigation of the molecular modification of . . . ”, “J. Mater. Res.”, Feb. 1993, pp. 334-338, vol. 8, No. 2.
Protasiewicz, John D., et al., “Synthesis and structural characterization of low-valent Group V phosphine complexes”, “Inorganic Chemistry”, Sep. 30, 1992, pp. 4134-4142, vol. 31, No. 20.
Reisman, A., et al., “Chemical vapor deposition of copper from copper (II) hexafluoroacetylacetonate”, “J. Electrochemical Soc.”, Nov. 1989, pp. 3525-3529, vol. 136, No. 11.
Riley, P. et al., “Formation of Tantalum ‘Tuck-in’ Complexes by Activation of Methyl-C-H Bonds in Pentamethylcyclopentadiene Groups . . . ”, “Organometallics”, Aug. 12, 1999, pp. 3579-3583, vol. 18.
Co-pending U.S. Appl. No. 12/773,650.
Rossnagel, S.M., et al., “Thin, high atmonic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications”, “J. Vac. Sci. Technol. B”, May/Jun. 1996, pp. 1819-1827, vol. 14, No. 3.
Rossnagel, S.M., et al., “Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications”, “J. Vac. Sci. Technol. B”, May 1996, pp. 1819-1827, vol. 14, No. 3.
Sabo-Etienne, S. et al. , “Synthesis, X-Ray crystal structure, NMR characterization and theoretical calculations on [Cp2Ta(n2-H2)(CO)]+, the first”, “New J. Chem ”, Nov. 28, 2000, pp. 55-62, vol. 25.
Schrock, Richard R., et al., “Multiple Metal-Carbon Bonds. 8. a Preparation, Characterization, and Mechanism of Formation of the Tantalum and . . . ”, “J. Amer. Chem. Soc.”, May 24, 1978, pp. 3359-3370, vol. 100, No. 11.
Schrock, Richard R., “Alkylidene complexes of niobium and tantalum”, “Accounts of Chemical Research”, Mar. 1979, pp. 98-104, vol. 12, No. 3.
Shibayama, Koichi, et al., “Living Polymerization of Carbodiimides Initiated by Copper(I) and Copper(II) Amidinate Complexes”, “Macromolecules”, Jun. 2, 1997, pp. 3159-3163, vol. 30, No. 11.
Shin, H. K., et al., “Chemistry of Copper(I) beta-diketonate complexes. 2. synthesis, characterization, and physical properties of . . . ”, “Inorganic Chemistry”, Feb. 5, 1992, pp. 424-431, vol. 31, No. 3, Publisher: American Chemical Society.
Shin, H.K., et al., “MOCVD of Titanium Nitride from a New Precursor, Ti[N(CH3)C2H5]4 ”, “Chem. Mater.”, Jan. 1997, pp. 76-80, vol. 9, No. 1.
Simmonds, M.G, et al., “Chemical vapor deposition of aluminum”, “The Chemistry of Metal CVD, Kodas, T. and Hampden-Smith, M. (eds)”, 1994, pp. 48-103, Publisher: VCH Publishers, Published in: New York.
Small, M.B., et al., “On-chip wiring for VLSI: Status and directions”, “IBM J. Res. Dev.”, Nov. 1990, pp. 858-867, vol. 34, No. 6.
Stolz, M., et al., “Universal chemical vapour deposition system for metallurgical coatings”, “Thin Solid Films”, Feb. 18, 1983, pp. 209-218, vol. 100, No. 3.
Sugiyama, Kozoh, et al., “Low temperature deposition of metal nitrides by thermal decomposition of organometallic compounds”, “J. Electrochem. Soc.”, Nov. 1975, pp. 1545-1549, vol. 122, No. 11.
Sun, Xin et al., “Properties of reactively sputter-deposited Ta-N thin films”, “Thin Solid Films”, 1993, pp. 347-351, vol. 236.
Sun, S.C., et al., “Diffusion barrier properties of CVD tantalum nitride for aluminum and copper interconnections”, “VMIC Conference, ISMIC”, Jun. 27-29, 1995, pp. 157-161.
Sun, S.C., et al., “Performance of MOCVD tantalum nitride diffusion barrier for copper metallization”, “1995 Symp. on VLSI Technol. Digest of Technical Papers”, Jun. 1995, pp. 29-30.
Suzuki, Toshiya, et al., “Comparison of CVD TiN, PECVD WNx, and CVD W-Si-N as upper electrode materials for Ta2O5 DRAM capacitors”, “Advanced Metallization Conference”, Sep. 28, 1997, Published in: San Diego.
Tabuchi, Toshiya, et al., “Application of penta-di-methyl-amino-tantalum to a tantalum source in chemical vapor deposition of tantalum oxide films”, “Japanese Journal of Applied Physics”, Nov. 1991, pp. L1974-L1977, vol. 30, No. 11B.
Tilley, T. Don, “The Reactivity of Transition Metal-Silicon Compounds”, “Final Technical Report, AD No. A200371”, Aug. 8, 1988, Publisher: Defense Technical Information Center.
Tilley, T Don., “Transition-metal silyl derivatives”, “The Chemistry of Organic Silicon Compounds, Patai, Saul and Rappaport, Zvi (eds)”, 1989, pp. 1415-1477, Publisher John Wiley & Sons, Published in: New York.
Tin, M. et al. , “Insertion Routes to Tetrasubstituted Guanidinate Complexes of Ta(V) and Nb(V)”, “Inorganic Chemistry”, Feb. 18, 1999, pp. 998-1001, vol. 38.
Tsai, M.H., et al., “Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido) tantalum for advanced . . . ”, “Appl. Phys. Lett.”, Aug. 21, 1995, pp. 1128-1130, vol. 67, No. 8.
Tsai, M.H., et al., “Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications”, “Thin Solid Films”, Dec. 1, 1995, pp. 531-536, vol. 270, No. 1-2.
Turner, Howard W., et al., “Tantalum complexes containing diimido bridging dinitrogen ligands”, “J. Amer. Chem. Soc.”, Dec. 17, 1980, pp. 7809-7811, vol. 102, No. 26.
Ugolini, D., et al., “Photoelectron spectroscopy studies of chemical vapor deposition of Ta from a TaF5 precursor on Si and SiO2 substrates”, “Journal of Applied Physics”, Oct. 1, 1991, pp. 3899-3906, vol. 70, No. 7.
Uhlig, Wolfram, “Darstellung neuartiger monomerer, oligomerer und polymerer Silyltriflate”, “Chem. Ber.”, 1992, pp. 47-53, vol. 125.
Zhang, Jiming, et al., “Metal organic chemical vapor deposition of LaSrCoO electrodes for ferroelectric capacitors”, “6th ISAF Mtg.”, Mar 1994.
Zinn, Alfred A., et al., “Chemical vapor deposition of platinum, palladium and nickel”, “The Chemistry of Metal CVD, Kodas, T. and Hampden-Smith, M. (ed.)”, 1994, pp. 330-339, Publisher: VCH Publishers, Published in: New York.
Van Vliet, P.I., et al., “Complexes of N,N1-substituted formamidines I. Compounds [M(RNC(H)NR1)]n (M=CuI, AgI; R=p-Tolyl; R′=Alkyl; n=2,4)”, “J. Organomet. Chem.”, Oct. 9, 1979, pp. 89-100, vol. 179, No. 1.
Van Buskirk, Peter C., et al., “MOCVD growth of BaTiO3 in an 8-inch single-wafer CVD reactor”, “Proc. ISAF, Eighth Int'l Symp. Appl. Ferroelectrics”, Aug. 31-Sep. 2 1992, vol. 92.
Van Hermert, R. L., et al., “Vapor deposition of metals by hydrogen reduction of metal chelates”, “J. Electrochemical Soc.”, 1965, pp. 1123-1126, vol. 112, No. 11.
Vossen, John L. and Kern, Werner, Eds., “Thin Film Process II”, 1991, p. 763, Publisher: Academic Press, Published in: Boston, Massachusetts.
Wan, Yanjian, et al., “Hydride and Fluoride Transfer Reactions Accompanying Nucleophilic Substitution at Pentacoordinate Silicon”, “J. Amer. Chem. Soc.”, Jan. 11, 1995, pp. 141-156, vol. 117, No. 1.
Wang, Shi-Qing, et al., “Step coverage comparison of Ti/TiN deposited by collimated and uncollimated physical vapor deposition techniques”, “J. Vac. Sci. Technol. B”, May 1996, pp. 1846-1852, vol. 14, No. 3.
Wang, Shi-Qing, “Barriers against copper diffusion into silicon and drift through silicon dioxide”, “MRS Bulletin”, Aug. 1994, pp. 30-40.
Wang, Shi-Qing, et al., “Film property comparison of Ti/TiN deposited by collimated and uncollimated physical vapor deposition techniques”, “J. Vac. Sci. Technol. B”, May/Jun. 1996, pp. 1837-1845, vol. 14, No. 3.
Werner, Robert P.M., et al., “Tetracarbonylcyclopentadienyl Compounds of the Group V Transition Metals”, “Inorganic Chemistry”, Feb. 1964, pp. 298-300, vol. 3, No. 2.
Williams, David N., et al., “Half-sandwich imido complexes of niobium and tantalum”, “J. Chem. Soc. Dalton Trans”, 1992, pp. 739-751.
Winter, Charles H., “Single-source precursors to niobium nitride and tantalum nitride films”, “Mat. Res. Soc. Symp. Proc.”, 1994, pp. 103-108, vol. 327, No. 1.
Winter, Charles H., “The chemical vapor deposition of metal nitride films using modern metalorganic precursors”, “Aldrichchimica Acta”, 2000, pp. 3-12, vol. 33, No. 1.
Xue, Z., et al., “Early-Transition-Metal Silyl Complexes Free from Anionic r-Ligands. A New Family of Alkyl, Alkylidene, and Alkylidyne . . . ”, “J. Amer. Chem. Soc.”, Mar. 9, 1994, pp. 2169-2170, vol. 116, No. 5.
Yam, Chi Ming, et al., “Simple Acid-Base Hydrolytic Chemistry Approach to Molecular Self-Assembly: Thin Films of Long Chain Alcohols . . . ”, “Langmuir”, Nov. 24, 1998, pp. 6941-6947, vol. 14, No. 24.
Zhang, Jiming, et al., “Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high quality YBa2Cu3O7-x thin films”, “Applied Physics Letters”, Dec. 14, 1992, pp. 2884-2886, vol. 61, No. 24.
Zhang, Jiming, et al., “Plasma enhanced metalorganic chemical vapor deposition of conductive oxide electrodes for ferroelectric BaTiO3 capacitor”, “Mater. Res. Soc. Symp. Proc.”, 1993, pp. 249-254, vol. 310.
Co-pending U.S. Appl. No. 12/707,449, filed Feb. 17, 2010.
Co-pending U.S. Appl. No. 11/949,871.

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