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US7858816: Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films

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Filing Information

Inventor(s) Tianniu Chen · Chongying Xu · Jeffrey F. Roeder · Thomas H. Baum ·
Assignee(s) Advanced Technology Materials, Inc. ·
Attorney/Agent(s) Steven J. Hultquist · Intellectual Property/Technology Law · Maggie Chappuis ·
Primary Examiner Porfirio Nazario Gonzalez ·
Application Number US12790835
Filing date 05/30/2010
Issue date 12/28/2010
Prior Publication Data
Predicted expiration date 01/12/2028
U.S. Classifications 556/42  · 257/751  · 423/62  ·
International Classifications C07F900  ·
Kind CodeB2
Related U.S. Application DataCROSS-REFERENCE TO RELATED APPLICATION
This is a divisional under 35 USC 120 of U.S. patent application Ser. No. 12/013,433 filed Jan. 12, 2008 in the names of Tianniu Chen, et al. for “TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205,” now U.S. Pat. No. 7,750,173 issued Jul. 6, 2010, which in turn claims the benefit of priority under 35 USC 119 of U.S. Provisional Patent Application 60/885,459 filed Jan. 18, 2007 in the names of Tianniu Chen, et al. for “TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205.” The disclosures of said U.S. Pat. No. 7,750,173 and said U.S. Provisional Patent Application 60/885,459 are hereby incorporated herein by reference, in their respective entireties, for all purposes.
20 Claims, 5 Drawings


Abstract

Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

Independent Claims | See all claims (20)

  1. 1. A method for making a tantalum compound of Formula I: wherein: R1, R2, R3 and R4 can be the same as or different from one another, and each is independently selected from the group consisting of hydrogen, hydrocarbyl, alkyl, silyl, alkylamino, alkenyl, aryl and hydrazyl, with the provisos that R1=R2≠iso-propyl, and R1=R2≠cyclohexyl; wherein said R1, R2, R3 and R4 may be optionally further substituted with a N, S, O, or a halogen atom, said method comprising the step of: (a) reacting a compound of Formula II below: M(NR3R4)5  (Formula II),  with a compound of Formula III: R1N═C═NR2  (Formula III),  wherein M is tantalum and R1, R2, R3 and R4 are as indicated above.
  2. 16. A method of making [(ButNC(NMe2)NEt)Ta(NMe2)4], comprising reacting ButN═C═Net and Ta(NMe2)5 in a reaction medium comprising solvent, and recovering said [(ButNC(NMe2)NEt)Ta(NMe2)4] under vacuum from said reaction medium.

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