Join
today

Boliven PRO is more than just patent search

  • Build and save lists using the powerful Lists feature
  • Analyze and download your search results
  • Share patent search results with your clients

Patents »

US7956364: Thin film light emitting diode

Share

Filing Information

Inventor(s) Myung Cheol Yoo ·
Assignee(s) LG Electronics Inc. ·
Attorney/Agent(s) McKenna Long & Aldridge LLP ·
Primary Examiner Nathan W Ha ·
Application Number US12654992
Filing date 01/12/2010
Issue date 06/07/2011
Prior Publication Data
Predicted expiration date 06/26/2022
U.S. Classifications 257/76  · 257/E33.062  ·
International Classifications H01L3330  ·
Kind CodeB2
Related U.S. Application DataThis application is a continuation of prior U.S. patent application Ser. No. 11/978,680, filed Oct. 30, 2007 now U.S. Pat. No. 7,649,210, which is a continuation of U.S. patent application Ser. No. 10/975,095, filed Oct. 28, 2004 now U.S. Pat. No. 7,691,650, which is a divisional of U.S. patent application Ser. No. 10/179,010, filed Jun. 26, 2002, now U.S. Pat. No. 6,841,802. Each of the aforementioned applications is incorporated herein by reference in its entirety.
69 Claims, 7 Drawings


Abstract

Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.

Independent Claims | See all claims (69)

  1. 1. A vertical topology light emitting device, comprising: a conductive support structure; an adhesion structure over the conductive support structure; a semiconductor structure over the adhesion structure, wherein the semiconductor structure has a first surface, a second surface and a side surface; a reflective structure between the adhesion structure and the first surface of the semiconductor structure, the reflective structure also serving as a first electrode, wherein the reflective structure is configured to reflect the light from the semiconductor structure; a second electrode over the second surface of the semiconductor structure, wherein the second surface is opposite the first surface; a passivation layer over the semiconductor structure; and a wavelength converting layer over the second surface of the semiconductor structure.

References Cited

U.S. Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
US3602982 PHILIPS CORP Kooi Sep 1971
US3774086 GEN ELECTRIC Vincent, Jr. Nov 1973
US3875456 Kano et al. Apr 1975
US3907620 HEWLETT PACKARD CO Abraham et al. Sep 1975
US4141135 Thomson-CSF Henry et al. Feb 1979
US4406052 GTE Laboratories Incorporated Cogan Sep 1983
US5034068 Spectrolab, Inc. Glenn et al. Jul 1991
US5040044 Mitsubishi Monsanto Chemical Company Noguchi et al. Aug 1991
US5162876* Kabushiki Kaisha Toshiba Kitagawa et al. Nov 1992
US5198795 Asahi Kasei Kogyo Kabushiki Kaisha Shibasaki et al. Mar 1993
US5504036 U.S. Philips Corporation Dekker et al. Apr 1996
US5523589 Cree Research, Inc. Edmond et al. Jun 1996
US5592501 Cree Research, Inc. Edmond et al. Jan 1997
US5620557 Toyoda Gosei Co., Ltd. Manabe et al. Apr 1997
US5631664 Olympus Optical Co., Ltd. Adachi et al. May 1997
US5644190 Advanced Vision Technologies, Inc. Potter Jul 1997
US5661074 Advanced Technology Materials, Inc. Tischler Aug 1997
US5684309 North Carolina State University McIntosh et al. Nov 1997
US5707745 The Trustees of Princeton University Forrest et al. Jan 1998
US5729029 Hewlett-Packard Company Rudaz Mar 1998
US5739554 Cree Research, Inc. Edmond et al. Apr 1998
US5804834 Mitsubishi Chemical Corporation Shimoyama et al. Sep 1998
US5813753 Philips Electronics North America Corporation Vriens et al. Sep 1998
US5847507 Hewlett-Packard Company Butterworth et al. Dec 1998
US5929466 Kabushiki Kaisha Toshiba Ohba et al. Jul 1999
US5930653 U.S. Philips Corporation Gaal Jul 1999
US5959307 Nichia Chemical Industries Ltd. Nakamura et al. Sep 1999
US5972781 Siemens Aktiengesellschaft Wegleiter Oct 1999
US5990500 Kabushiki Kaisha Toshiba Okazaki Nov 1999
US5998925 Nichia Kagaku Kogyo Kabushiki Kaisha Shimizu et al. Dec 1999
US6025251 Siemens Aktiengesellschaft Jakowetz et al. Feb 2000
US6043515 Kabushiki Kaisha Toshiba Kamiguchi et al. Mar 2000
US6066861 Siemens Aktiengesellschaft Hohn et al. May 2000
US6067309 Kabushiki Kaisha Toshiba Onomura et al. May 2000
US6069440 Nichia Kagaku Kogyo Kabushiki Kaisha Shimizu et al. May 2000
US6071795 The Regents of the University of California Cheung et al. Jun 2000
US6078064 Epistar Co. Ming-Jiunn et al. Jun 2000
US6096570 Yamaha Corporation Hattori Aug 2000
US6100104 Siemens Aktiengesellschaft Haerle Aug 2000
US6100545 Toyoda Gosei Co., Ltd. Chiyo et al. Aug 2000
US6120600 Cree, Inc. Edmond et al. Sep 2000
US6146916 Murata Manufacturing Co., Ltd. Nanishi et al. Nov 2000
US6172382 Nichia Chemical Industries, Ltd. Nagahama et al. Jan 2001
US6277301 Osram Opto Semiconductor, GmbH & Co. oHG Hohn et al. Aug 2001
US6278136 Kabushiki Kaisha Toshiba Nitta Aug 2001
US6281526 Kabushiki Kaisha Toshiba Nitta et al. Aug 2001
US6303405 Kabushiki Kaisha Toshiba Yoshida et al. Oct 2001
US6320206 LumiLeds Lighting, U.S., LLC Coman et al. Nov 2001
US6326294 Kwangju Institute of Science and Technology Jang et al. Dec 2001
US6329216 Rohm Co., Ltd. Matsumoto et al. Dec 2001
US6339010 President of Tokyo University of Agriculture & Technology Sameshima Jan 2002
US6350998 NEC Corporation Tsuji Feb 2002
US6358770 Matsushita Electric Industrial Co., Ltd. Itoh et al. Mar 2002
US6365429 Xerox Corporation Kneissl et al. Apr 2002
US6388275 Sanyo Electric Co., Ltd. Kano May 2002
US6395572 ROHM Co, Ltd. Tsutsui et al. May 2002
US6426512 Toyoda Gosei Co., Ltd. Ito et al. Jul 2002
US6455340 Xerox Corporation Chua et al. Sep 2002
US6335217 Toyoda Gosei Co., Ltd. Chiyo et al. Nov 2002
US6479839 Technologies & Devices International, Inc. Nikolaev et al. Nov 2002
US6495894 NGK Insulators, Ltd. Shibata et al. Dec 2002
US6500689 Toyoda Gosei Co., Ltd. Uemura et al. Dec 2002
US6500869 Merck Patent Gesellschaft Driller et al. Dec 2002
US6508878 LG Electronics Inc. Kim et al. Jan 2003
US6510195 Koninklijke Philips Electronics, N.V. Chappo et al. Jan 2003
US6515306 South Epitaxy Corporation Kuo et al. Feb 2003
US6518079 Lumileds Lighting, U.S., LLC Imier Feb 2003
US6551848 Samsung Electro-Mechanics Co., Ltd. Kwak et al. Apr 2003
US6555405 Uni Light Technology, Inc. Chen et al. Apr 2003
US6562648 Xerox Corporation Wong et al. May 2003
US6586875 United Epitaxy Company, Inc. Chen et al. Jul 2003
US6589808 Toyoda Gosei Co., Ltd. Chiyo et al. Jul 2003
US6600175 Advanced Technology Materials, Inc. Baretz et al. Jul 2003
US6603146 Sharp Kabushiki Kaisha Hata et al. Aug 2003
US6614060 Arima Optoelectronics Corporation Wang et al. Sep 2003
US6624491 Osram Opto Semiconductors GmbH & Co. Waitl et al. Sep 2003
US6639925 Hitachi, Inc. Niwa et al. Oct 2003
US6639928 Commissariat a lEnergie Atomique - CEA Marion Oct 2003
US6677173 Pioneer Corporation Ota Jan 2004
US6693935 Sony Corporation Tojo et al. Feb 2004
US6696703 Lumileds Lighting U.S., LLC Mueller-Mach et al. Feb 2004
US6735230 Rohm, Co., Ltd Tanabe et al. May 2004
US6711192 Pioneer Corporation Chikuma et al. Jun 2004
US6744196 Oriol, Inc. Jeon Jun 2004
US6746889 Emcore Corporation Eliashevich et al. Jun 2004
US6765232 Ricoh Company, Ltd. Takahashi et al. Jul 2004
US6784463 Lumileds Lighting U.S., LLC Camras et al. Aug 2004
US6803603 Kabushiki Kaisha Toshiba Nitta et al. Oct 2004
US6815725 Kabushiki Kaisha Toshiba Sugawara et al. Nov 2004
US6818531 Samsung Electro-Mechanics Co., Ltd. Yoo et al. Nov 2004
US6846686 Kabushiki Kaisha Toshiba Saeki et al. Jan 2005
US6869820 United Epitaxy Co., Ltd. Chen Mar 2005
US6873634* Kabushiki Kaisha Toshiba Onomura et al. Mar 2005
US6876003* Sumitomo Electric Industries, Ltd. Nakamura et al. Apr 2005
US6876005* Epistar Corporation Hsieh et al. Apr 2005
US6949395 Oriol, Inc. Yoo Sep 2005
US6960488 The Regents of the University of California Brosnihan et al. Nov 2005
US6992334 Lumileds Lighting U.S., LLC Wierer et al. Jan 2006
US7067849 LG Electronics Inc. Yoo Jun 2006
US7125737 Cree, Inc. Edmond et al. Oct 2006
US7148520 LG Electronics Inc. Yoo Dec 2006
US7250638 LG Electronics Inc. Lee et al. Jul 2007
US7371597 LG Electronics Inc. Yoo May 2008
US7402838 Nichia Corporation Tanizawa et al. Jul 2008
US20010004112 KABUSHIKI KAISHA TOSHIBA Furukawa et al. Jun 2001
US20010014391 Forrest et al. Aug 2001
US20010019134 Chang et al. Sep 2001
US20010042866 Coman et al. Nov 2001
US20020000643 Uemura et al. Jan 2002
US20020030444 Muller-Mach et al. Mar 2002
US20020043926 TOYODA GOSEI CO., LTD. Takahashi et al. Apr 2002
US20020137244 Uni Light Technology Inc. Chen et al. Sep 2002
US20020145147 Chiou et al. Oct 2002
US20020163302 Nitta et al. Nov 2002
US20030077847 Yoo Apr 2003
US20030122144 Toyoda Gosei Co., Ltd. Uemura et al. Jul 2003
US20040033638 Bader Feb 2004
US20040051105 Tsuda et al. Mar 2004
US20040259279 Erchak et al. Dec 2004
US20060027831 Toyoda Gosei Co., Ltd. Kioke et al. Feb 2006
US20060060866 Toyoda Gosel Co., Ltd. Tezen Mar 2006
US20060175681 LI JING Li Aug 2006
US20060289886 KABUSHIKI KAISHA TOSHIBA Sakai Dec 2006
US20070020790 Luminus Devices, Inc. Erchak et al. Jan 2007
US20070048885 JEON HYEONG T Jeon Mar 2007
US20070122994 ROHM CO., LTD. Sonobe et al. May 2007
US20090072264 Yoo Mar 2009

Foreign Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
DE10022879PIONEER CORPDec 2000
DE2009283Feb 2001
DE19945007OPTO TECH CORPMar 2001
EP1451853Oriol, Inc.Sep 2004
JP9008403Jan 1997
JP10177974NIPPON STEEL CORPJun 1998
JP11126923TOYODA GOSEI CO LTDMay 1999
JP2000196197XEROX CORPJul 2000
JP2001244503NICHIA CHEM IND LTDSep 2001
JP2001339100SHIN ETSU HANDOTAI CO LTDDec 2001
JP2002076523XEROX CORPMar 2002
KR1020020000141PHILIPS LUMILEDS LIGHTING COMPANY, LLCJan 2002
WO200147038LUMILEDS LIGHTING U.S., LLCJun 2001
WO2003038874ORIOL, INC.May 2003
* cited by examiner

Other Publications

Wong et al, “Integration of InGaN Laser Diodes with Dissimilar Substrates by Laser Lift-Off”, 2001, materials Research Society, pp. 12.2.1-12.2.5.
Michael Kneissl, et al., “Continuous-Wave Operation of InGAN Multiple-Quantum-Well Laser Diodes on Copper Substrates Obtained by Laser Liftoff,”IEEE Journal on Selected Topics in Quantum Electronics, vol. 7, No. 2, Mar./Apr. 2001, pp. 188-191.
William S. Wong, et al., “Continuous-wave InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates,” Applied Physics Letters, vol. 78, No. 9, Feb. 2001, pp. 1198-1200.
William S. Wong, et al, “The Integration of InxGa1-xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off,” Jpn. J. Appl. Phys. vol. 39, Dec. 2000, pp. 1203-1205.
Authors: Mensz, P. M.; Kellawon, P.; van Rojen, R.; Kozodoy, P.; Denbaars, S.; Title: “InxGa1-xN/AlyGa1-yN Violet light emitting diodes with reflective p-contacts for high single sided light extraction”; Electronic Letters; 20th Nov. 1997; vol. 33-No. 24.
Wolf, “Silicon Processing for the VLSI Era”, vol. 2: process integration, pp. 193, 1990.
www.wordnet.princeton.edu/perl/webwn, retrieved Jan. 22, 2008.
Kelly et al., “Optical Process for Liftoff of Group III-nitride films”, Nov. 1996.
Schraud G et al: “Substrateless singlemode vertical cavity surface-emitting GaAs/GaAIAs laser diode” Electronics Letters, IEE Stevenage, GB LNKD- DOI:10.1049/EL:19940175, vol. 30, No. 3, Feb. 3, 1994, pp. 238-239, XP006000167 ISSN: 0013-5194 * Device fabrication; p. 238, left-hand column, last paragraph-p. 239, left-hand column, line6*.

Patent Family

The current document is not in a family.