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US7956364: Thin film light emitting diode


Filing Information

Inventor(s) Myung Cheol Yoo ·
Assignee(s) LG Electronics Inc. ·
Attorney/Agent(s) McKenna Long & Aldridge LLP ·
Primary Examiner Nathan W Ha ·
Application Number US12654992
Filing date 01/12/2010
Issue date 06/07/2011
Prior Publication Data
Predicted expiration date 06/26/2022
U.S. Classifications 257/76  · 257/E33.062  ·
International Classifications H01L3330  ·
Kind CodeB2
Related U.S. Application DataThis application is a continuation of prior U.S. patent application Ser. No. 11/978,680, filed Oct. 30, 2007 now U.S. Pat. No. 7,649,210, which is a continuation of U.S. patent application Ser. No. 10/975,095, filed Oct. 28, 2004 now U.S. Pat. No. 7,691,650, which is a divisional of U.S. patent application Ser. No. 10/179,010, filed Jun. 26, 2002, now U.S. Pat. No. 6,841,802. Each of the aforementioned applications is incorporated herein by reference in its entirety.
69 Claims, 7 Drawings


Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.

Independent Claims | See all claims (69)

  1. 1. A vertical topology light emitting device, comprising: a conductive support structure; an adhesion structure over the conductive support structure; a semiconductor structure over the adhesion structure, wherein the semiconductor structure has a first surface, a second surface and a side surface; a reflective structure between the adhesion structure and the first surface of the semiconductor structure, the reflective structure also serving as a first electrode, wherein the reflective structure is configured to reflect the light from the semiconductor structure; a second electrode over the second surface of the semiconductor structure, wherein the second surface is opposite the first surface; a passivation layer over the semiconductor structure; and a wavelength converting layer over the second surface of the semiconductor structure.

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