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US7964881: Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same

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Filing Information

Inventor(s) Pun Jae Choi · Jin Hyun Lee · Ki Yeol Park · Myong Soo Cho ·
Assignee(s) Samsung LED Co., Ltd. ·
Attorney/Agent(s) McDermott Will & Emery LLP ·
Primary Examiner A. Sefer ·
Application Number US12189428
Filing date 08/11/2008
Issue date 06/21/2011
Prior Publication Data
Predicted expiration date 01/03/2029
Patent term adjustment 145
U.S. Classifications 257/89  · 257/E33.062  · 257/E33.034  · 438/26  · 257/79  ·
International Classifications H01L3300  ·
Kind CodeB2
Foreign Priority KR1020070105365 - 10/19/2007 ·
12 Claims, 13 Drawings


Abstract

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Independent Claims | See all claims (12)

  1. 1. A semiconductor light emitting device comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer on the active layer; a second electrode layer on the second conductivity type semiconductor layer; an insulating layer on the second electrode layer; a first electrode layer on the insulting layer; and a conductive substrate on the first electrode layer, wherein the second electrode layer has an exposed area at an interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least a part of the first conductivity type semiconductor layer.

References Cited

U.S. Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
US6201265* Sharp Kabushiki Kaisha Teraguchi Mar 2001
US6255129* Highlink Technology Corporation Lin Jul 2001
US6459100 Cree, Inc. Doverspike et al. Oct 2002
US6828596 Lumileds Lighting U.S., LLC Steigerwald et al. Dec 2004
US20070114564* Samsung Electro-Mechanics Co., Ltd. Lee et al. May 2007
US20070181895* NAGAI HIDEO Nagai Aug 2007
US20080179605* TAKASE YUJI Takase et al. Jul 2008
US20080191215* SAMSUNG ELECTRO-MECHANICS CO., LTD. Choi et al. Aug 2008
US20080237622* SAMSUNG ELECTRO-MECHANICS CO., LTD. Choi et al. Oct 2008
US20080277674* NAGAI HIDEO Nagai et al. Nov 2008
US20080303055* SEONG TAE-YEON Seong Dec 2008
US20090101923 SAMSUNG ELECTRO-MECHANICS CO., LTD. Choi et al. Apr 2009
US20090173952* Sanyo Electric Co., Ltd. Takeuchi et al. Jul 2009

Foreign Patent Documents

Document NumberAssigneesInventorsIssue/Pub Date
DE10026255OSRAM OPTO SEMICONDUCTORS GMBHNov 2001
DE102007022947OSRAM OPTO SEMICONDUCTORS GMBHOct 2008
JP2003347653SUMITOMO ELECTRIC IND LTDDec 2003
JP2005322722*KORAI KAGI KOFUN YUGENKOSHINov 2005
KR1020060010527SAMSUNG ELECTRO-MECHANICS CO., LTD.Feb 2006
WO2007074969*SAMSUNG ELECTRONICS CO., LTD.Jul 2007
* cited by examiner

Other Publications

German Office Action, w/ English translation thereof, issued in German Patent Application No. 10 2009 010 480.1 dated Oct. 14, 2009.
Korean Office Action, with English translation, issued in Korean Patent Application No. 10-2007-0105365, dated Jan. 29, 2009.
United States Office Action issued in U.S. Appl. No. 12/757,557 dated May 27, 2010.
United States Office Action issued in U.S. Appl. No. 12/757,557, mailed Jan. 5, 2011.

Referenced By

Document NumberAssigneeInventorsIssue/Pub Date
US8450751 --
US8653540 --
US8866175 --
US8698176 --

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