Filing Information

Inventor(s)	Pun Jae Choi · Jin Hyun Lee · Ki Yeol Park · Myong Soo Cho ·
Assignee(s)	Samsung LED Co., Ltd. ·  View assignee updates
Attorney/Agent(s)	McDermott Will & Emery LLP ·
Primary Examiner	A. Sefer ·
Application Number	US12189428
Filing date	08/11/2008
Issue date	06/21/2011
Prior Publication Data	US20090101923 - 04/23/2009
Predicted expiration date	01/03/2029
Patent term adjustment	145
U.S. Classifications	257/89  · 257/E33.062  · 257/E33.034  · 438/26  · 257/79  ·
International Classifications	H01L3300  ·
Kind Code	B2
Foreign Priority	KR1020070105365 - 10/19/2007 ·

Patent Family

Abstract

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Independent Claims | See all claims (12)

1. 1. A semiconductor light emitting device comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer on the active layer; a second electrode layer on the second conductivity type semiconductor layer; an insulating layer on the second electrode layer; a first electrode layer on the insulting layer; and a conductive substrate on the first electrode layer, wherein the second electrode layer has an exposed area at an interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least a part of the first conductivity type semiconductor layer.