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1-10 of 767 patent results

Method for etching a platinum layer in a semiconductor device

U.S. Patent US6054391 | Filed: 08/24/1998 | Issued: 04/25/2000
Assignee(s): Samsung Electronics Co., Ltd. | Inventor(s): Byeong-yun Nam + 1 | Agent(s): Howrey Simon Arnold & White, LLP | Examiner(s): Benjamin L. Utech
A method of etching a platinum (Pt) layer of a semiconductor device includes the steps of forming a platinum layer on a semiconductor substrate, and forming a mask layer on the platinum layer. A ph...

Techniques for etching an oxide layer

U.S. Patent US6083844 | Filed: 12/22/1997 | Issued: 07/04/2000
Assignee(s): Lam Research Corporation | Inventor(s): Giao Quynh Bui-Le + 1 | Agent(s): Beyer Weaver & Thomas, LLP | Examiner(s): Richard Bueker
A method for etching a substrate having thereon a silicon dioxide-containing layer disposed above a TiN layer is disclosed. The method includes positioning the substrate in the plasma processing ch...

Dry process for cleaning residues/polymers after metal etch

U.S. Patent US6184134 | Filed: 02/18/2000 | Issued: 02/06/2001
Assignee(s): Infineon Technologies North America Corp. | Inventor(s): Nirmal Chaudhary + 2 | Agent(s): Stanton Braden | Examiner(s): John F. Niebling
An all dry, low temperature process, for complete removal of organics and inorganic residues after metal etch of a microelectronic device comprising: rinsing a microelectronic device having a metal...

Deep sub-micron metal etch with in-situ hard mask etch

U.S. Patent US6194323 | Filed: 12/16/1998 | Issued: 02/27/2001
Assignee(s): Lucent Technologies Inc. | Inventor(s): Stephen Ward Downey + 1 | Examiner(s): William Powell
The invention includes a process for the production of semiconductor devices comprising the steps of depositing a metal layer on a semiconductor substrate, depositing a hardmask layer on said metal...

Method of fabricating a node contact

U.S. Patent US6316368 | Filed: 04/05/1999 | Issued: 11/13/2001
Assignee(s): United Microelectronics Corp. | Inventor(s): Kwang-Ming Lin + 3 | Agent(s): Jiawei Huang + 1 | Examiner(s): Benjamin L. Utech
A method of fabricating a node contact opening is described. A dielectric layer is formed on a substrate. A first conductive layer is formed on the dielectric layer. The first conductive layer is e...

Method to avoid copper contamination during copper etching and cmp

U.S. Patent US6274499 | Filed: 11/19/1999 | Issued: 08/14/2001
Assignee(s): Chartered Semiconductor Manufacturing Ltd. | Inventor(s): Subhash Gupta + 3 | Agent(s): George O. Saile + 1 | Examiner(s): Benjamin L. Utech
In accordance with the objects of this invention a new method to prevent copper contamination of the intermetal dielectric layer during etching, CMP, or post-etching and post-CMP cleaning by formin...

Method and apparatus for low energy electron enhanced etching of substrates in an ac or dc plasma environment

U.S. Application | Pub No. US20010030026 | Filed: 05/15/2001 | Published: 10/18/2001
Inventor(s): Harry Gillis + 2
A method of low-damage, anisotropic etching of substrates including mounting the substrate upon a mechanical support located within an ac or dc plasma reactor. The mechanical support is independent...

Method for processing samples

U.S. Patent US5952245 | Filed: 09/25/1996 | Issued: 09/14/1999
Assignee(s): Ltd. Hitachi | Inventor(s): Yoshimi Torii + 5 | Agent(s): Antonelli, Terry, Stout & Kraus, LLP | Examiner(s): Bruce Breneman
Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for ...

Method for anisotropically etching tungsten using sf.sub.6, chf.sub.3, and n.sub.2

U.S. Patent US5866483 | Filed: 04/04/1997 | Issued: 02/02/1999
Assignee(s): Applied Materials, Inc. | Inventor(s): Guang-Jye Shiau + 3 | Agent(s): Ashok K. Janah | Examiner(s): William Powell
A method for etching a tungsten containing layer 25 on a substrate 10 substantially anisotropically, with good etching selectivity, and without forming excessive passivating deposits on the etched ...

Method of producing solar cell device

U.S. Patent US6207471 | Filed: 09/24/1999 | Issued: 03/27/2001
Assignee(s): Citizen Watch, Co., LTD | Inventor(s): Shinzo Yanagimachi + 1 | Agent(s): Armstrong, Westerman, Hattori, McLeland & Naughton | Examiner(s): Matthew Smith
A fabricating method for a solar cell device (2) comprises the steps of: forming a transparent oxide electrode (12) on the surface of an insulating substrate (10); cleaning the surfaces of the insu...